No. |
Part Name |
Description |
Manufacturer |
31 |
K4S561633C-RBL |
16Mx16 SDRAM 54CSP |
Samsung Electronic |
32 |
K4S561633C-RL |
16Mx16 SDRAM 54CSP |
Samsung Electronic |
33 |
KMM366S1623BTL |
PC66 SDRAM Module |
Samsung Electronic |
34 |
KMM366S403CTL |
PC66 SDRAM MODULE |
Samsung Electronic |
35 |
KMM366S403CTL-G0 |
PC66 SDRAM MODULE |
Samsung Electronic |
36 |
T4312816A |
8M x 16 SDRAM |
Taiwan Memory Technology |
37 |
T4312816A-10S |
8M x 16 SDRAM |
Taiwan Memory Technology |
38 |
T4312816A-10S |
100MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
39 |
T4312816A-6S |
8M x 16 SDRAM |
Taiwan Memory Technology |
40 |
T4312816A-6S |
166MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
41 |
T4312816A-7.5S |
8M x 16 SDRAM���� |
Taiwan Memory Technology |
42 |
T4312816A-7.5S |
133MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
43 |
T4312816A-7S |
8M x 16 SDRAM |
Taiwan Memory Technology |
44 |
T4312816A-7S |
143MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
45 |
T4312816A-8S |
8M x 16 SDRAM |
Taiwan Memory Technology |
46 |
T4312816A-8S |
125MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
47 |
T431616A |
1M x 16 SDRAM |
Taiwan Memory Technology |
48 |
T431616A-7C |
1M x 16 SDRAM |
Taiwan Memory Technology |
49 |
T431616A-7C |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
50 |
T431616A-7CI |
1M x 16 SDRAM |
Taiwan Memory Technology |
51 |
T431616A-7CI |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
52 |
T431616A-7S |
1M x 16 SDRAM |
Taiwan Memory Technology |
53 |
T431616A-7S |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
54 |
T431616A-7SI |
1M x 16 SDRAM |
Taiwan Memory Technology |
55 |
T431616A-7SI |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
56 |
V54C3128164VB6 |
8Mbit x 16 SDRAM, 3.3V, LVTTL, 6ns |
Mosel Vitelic Corp |
57 |
V54C3128164VB7 |
8Mbit x 16 SDRAM, 3.3V, LVTTL, 7ns |
Mosel Vitelic Corp |
58 |
V54C3128164VB8 |
8Mbit x 16 SDRAM, 3.3V, LVTTL, 8ns |
Mosel Vitelic Corp |
59 |
V54C316162 |
200/183/166/143 MHz 3.3 VOLT/ 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 |
Mosel Vitelic Corp |
60 |
V54C316162V |
200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 |
Mosel Vitelic Corp |
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