| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MAX16039LLA26/GG8 |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 32 |
MAX16039LLA29+ |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 33 |
MAX16039LLA29+T |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 34 |
MAX16039LLA31+ |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 35 |
MAX16039LLA31+T |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 36 |
MAX16039LLA44+T |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 37 |
MAX16039LLA46+T |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 38 |
MAX16039PLA23+T |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 39 |
MAX16039PLA26+ |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 40 |
MAX16039PLA26+T |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 41 |
MAX16039PLA29+ |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 42 |
MAX16039PLA29+T |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 43 |
MAX16039PLA31+ |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 44 |
MAX16039PLA31+T |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 45 |
MAX16039PLA46+T |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
| 46 |
MAZ6039 |
Silicon planer type |
Panasonic |
| 47 |
MC100ES6039 |
2.5/3.3 V PECL/HSTL/LVDS ÷2/4, ÷4/6 Clock Generation Chip |
Freescale (Motorola) |
| 48 |
MC100ES6039DW |
3.3V ECL/PECL/HSTL/LVDS 2/4, 4/6 Clock Generation Chip |
Freescale (Motorola) |
| 49 |
MC100ES6039DWR2 |
3.3V ECL/PECL/HSTL/LVDS 2/4, 4/6 Clock Generation Chip |
Freescale (Motorola) |
| 50 |
MC100ES6039EG |
3.3V ECL/PECL/HSTL/LVDS 2/4, 4/6 Clock Generation Chip |
Freescale (Motorola) |
| 51 |
MC100ES6039EGR2 |
3.3V ECL/PECL/HSTL/LVDS 2/4, 4/6 Clock Generation Chip |
Freescale (Motorola) |
| 52 |
MH8S7245BWZTJ-5 |
603979776-bit synchronous DRAM |
Mitsubishi Electric Corporation |
| 53 |
MH8S7245BWZTJ-6 |
603979776-bit synchronous DRAM |
Mitsubishi Electric Corporation |
| 54 |
MH8S72BALD-10 |
603979776-BIT (8388608 - WORD BY 72-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 55 |
MH8S72BALD-7 |
603979776-BIT (8388608 - WORD BY 72-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 56 |
MH8S72BALD-8 |
603979776-BIT (8388608 - WORD BY 72-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 57 |
MH8S72BMG-10 |
603979776-BIT (8388608 - WORD BY 72-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 58 |
MH8S72BMG-7 |
603979776-BIT (8388608 - WORD BY 72-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 59 |
MH8S72BMG-8 |
603979776-BIT (8388608 - WORD BY 72-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 60 |
MH8S72DALD-6 |
603979776-BIT (8388608 - WORD BY 72-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| | | |
