No. |
Part Name |
Description |
Manufacturer |
31 |
HM51S4260ALZ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
32 |
HM51S4260ALZ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
33 |
HYB18T256160AL-3S |
256 Mbi t DDR2 SDRAM |
Infineon |
34 |
IMIZ9960AL |
2.5V/3.3V, 200 MHz Multi-Output Zero Delay Buffer |
Cypress |
35 |
IMIZ9960ALT |
2.5V/3.3V, 200 MHz Multi-Output Zero Delay Buffer |
Cypress |
36 |
M57160AL |
IGBT MODULE HYBRID IC |
Isahaya Electronics Corporation |
37 |
MC35060AL |
Precision Switchmode pulse width modulation control circuit |
Motorola |
38 |
MRF18060A |
MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
39 |
MRF18060ALSR3 |
1.80–1.88 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFETs |
Freescale (Motorola) |
40 |
MRF18060ALSR3 |
RF POWER FIELD EFFECT TRANSISTORS |
Motorola |
41 |
NN5118160ALJ-50 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
42 |
NN5118160ALJ-60 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
43 |
NN5118160ALJ-70 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
44 |
NN5118160ALRR-50 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
45 |
NN5118160ALRR-60 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
46 |
NN5118160ALRR-70 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
47 |
NN5118160ALTT-50 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
48 |
NN5118160ALTT-60 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
49 |
NN5118160ALTT-70 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
50 |
S-80860ALNP-EEQ-T2 |
Low-voltage high-precision voltage detector |
Epson Company |
51 |
SCT3060AL |
N-channel Silicon Carbide Power MOSFET |
ROHM |
52 |
SCT3060ALC11 |
N-channel Silicon Carbide Power MOSFET |
ROHM |
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