No. |
Part Name |
Description |
Manufacturer |
31 |
2N6187 |
10A medium power PNP silicon transistor 60W 80V |
Motorola |
32 |
2N6188 |
10A medium power PNP silicon transistor 60W 100V |
Motorola |
33 |
2N6189 |
10A medium power PNP silicon transistor 60W 100V |
Motorola |
34 |
2N6282 |
POWER TRANSISTORS(20A,160W) |
MOSPEC Semiconductor |
35 |
2N6282 |
Darlington 20A complementary silicon 160W power NPN transistor |
Motorola |
36 |
2N6283 |
POWER TRANSISTORS(20A,160W) |
MOSPEC Semiconductor |
37 |
2N6283 |
Darlington 20A complementary silicon 160W power NPN transistor |
Motorola |
38 |
2N6284 |
POWER TRANSISTORS(20A,160W) |
MOSPEC Semiconductor |
39 |
2N6284 |
Darlington 20A complementary silicon 160W power NPN transistor |
Motorola |
40 |
2N6285 |
POWER TRANSISTORS(20A,160W) |
MOSPEC Semiconductor |
41 |
2N6285 |
Darlington 20A complementary silicon 160W power PNP transistor |
Motorola |
42 |
2N6286 |
POWER TRANSISTORS(20A,160W) |
MOSPEC Semiconductor |
43 |
2N6286 |
Darlington 20A complementary silicon 160W power PNP transistor |
Motorola |
44 |
2N6287 |
POWER TRANSISTORS(20A,160W) |
MOSPEC Semiconductor |
45 |
2N6287 |
Darlington 20A complementary silicon 160W power PNP transistor |
Motorola |
46 |
2N6439 |
Application Note - A 60W 225-400MHz amplifier |
Motorola |
47 |
2N6439 |
Controlled Q broadband NPN silicon RF power transistor 60W - 225-400MHz |
Motorola |
48 |
2N708 |
0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. |
Continental Device India Limited |
49 |
2N915 |
0.360W General Purpose NPN Metal Can Transistor. 50V Vceo, A Ic, 50 - 200 hFE. |
Continental Device India Limited |
50 |
2SA1207 |
High-Voltage Switching AF 60W Predriver Applications |
SANYO |
51 |
2SB817 |
PNP Epitaxial Planar Silicon Transistors 140V/12A AF 60W Output Applications |
SANYO |
52 |
2SC2909 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver Applications |
SANYO |
53 |
2SD1047 |
NPN Triple Diffused Planar Silicon Transistors 140V/12A AF 60W Output Applications |
SANYO |
54 |
2SD633P |
V(cbo): 100V; V(ceo): 85V; V(ebo): 6V; 6A; 60W; epitaxial planar silicon transistor. For 85V/6A, AF 35 to 45W output applications |
SANYO |
55 |
350PEQ60W |
V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
56 |
50MT060WH |
600V Warp 20-100 kHz Half-Bridge IGBT in a MTP package |
International Rectifier |
57 |
50MT060WHT |
600V Warp 20-100 kHz Half-Bridge IGBT in a MTP package |
International Rectifier |
58 |
74LCX760WM |
Low Voltage Buffer/Line Driver with 5V Tolerant Inputs and Open Drain Outputs |
Fairchild Semiconductor |
59 |
74LCX760WMX |
Low Voltage Buffer/Line Driver with 5V Tolerant Inputs and Open Drain Outputs |
Fairchild Semiconductor |
60 |
AM29DL640H60WHE |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
Advanced Micro Devices |
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