| No. |
Part Name |
Description |
Manufacturer |
| 31 |
ICL7611DESA |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 32 |
ICL7611DESA+ |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 33 |
ICL7611DMJD |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 34 |
ICL7611DMJE |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 35 |
ICL7611DMPA |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 36 |
ICL7611DMPD |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 37 |
ICL7611DMPE |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 38 |
ICL7611DMSA |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 39 |
ICL7611DMSD |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 40 |
ICL7611DMSE |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 41 |
ICL7611DMTV |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 42 |
ICL7611DMWE |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 43 |
K4E151611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 44 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 45 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 46 |
K4E171611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 47 |
K4E171611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 48 |
K4E171611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 49 |
K4E661611D, K4E641611D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 50 |
K4E661611D, K4E641611D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 51 |
K4F151611D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 52 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 53 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 54 |
K4F171611D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 55 |
K4F171611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 56 |
K4F171611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 57 |
K4F661611D, K4F641611D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 58 |
K4F661611D, K4F641611D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 59 |
L6611D |
DIGITALLY PROGRAMMABLE SECONDARY HOUSEKEEPING CONTROLLER |
SGS Thomson Microelectronics |
| 60 |
L6611D |
DIGITALLY PROGRAMMABLE SECONDARY HOUSEKEEPING CONTROLLER |
ST Microelectronics |
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