No. |
Part Name |
Description |
Manufacturer |
31 |
ICL7611DCWE |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
32 |
ICL7611DC_D |
Single operational amplifier, 15mV |
MAXIM - Dallas Semiconductor |
33 |
ICL7611DESA |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
34 |
ICL7611DESA+ |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
35 |
ICL7611DMJD |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
36 |
ICL7611DMJE |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
37 |
ICL7611DMPA |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
38 |
ICL7611DMPD |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
39 |
ICL7611DMPE |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
40 |
ICL7611DMSA |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
41 |
ICL7611DMSD |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
42 |
ICL7611DMSE |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
43 |
ICL7611DMTV |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
44 |
ICL7611DMWE |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
45 |
K4E151611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
46 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
47 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
48 |
K4E171611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
49 |
K4E171611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
50 |
K4E171611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
51 |
K4E661611D, K4E641611D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
52 |
K4E661611D, K4E641611D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
53 |
K4F151611D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
54 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
55 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
56 |
K4F171611D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
57 |
K4F171611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
58 |
K4F171611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
59 |
K4F661611D, K4F641611D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
60 |
K4F661611D, K4F641611D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
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