| No. |
Part Name |
Description |
Manufacturer |
| 31 |
ICL7612BCSE |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 32 |
ICL7612BCTV |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 33 |
ICL7612BCWE |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 34 |
ICL7612BESA+ |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 35 |
ICL7612BESA+T |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 36 |
ICL7612BMJD |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 37 |
ICL7612BMJE |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 38 |
ICL7612BMPA |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 39 |
ICL7612BMPD |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 40 |
ICL7612BMPE |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 41 |
ICL7612BMSA |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 42 |
ICL7612BMSD |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 43 |
ICL7612BMSE |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 44 |
ICL7612BMTV |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 45 |
ICL7612BMWE |
Single/Dual/Triple/Quad Operational Amplifiers |
MAXIM - Dallas Semiconductor |
| 46 |
ISL6612B |
Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP |
Intersil |
| 47 |
K4E641612B |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 48 |
K4E641612B-L |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 49 |
K4E641612B-TC |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 50 |
K4E641612B-TC45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
| 51 |
K4E641612B-TC50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
| 52 |
K4E641612B-TC60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
| 53 |
K4E641612B-TL45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 54 |
K4E641612B-TL50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 55 |
K4E641612B-TL60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 56 |
K4E661612B |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 57 |
K4E661612B-L |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 58 |
K4E661612B-TC |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 59 |
K4E661612B-TC45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
| 60 |
K4E661612B-TC50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
| | | |
