| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MLD1N06CL-D |
SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level N-Channel DPAK |
ON Semiconductor |
| 32 |
MLD1N06CLT4 |
SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level |
ON Semiconductor |
| 33 |
MLD1N06CLT4G |
SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level |
ON Semiconductor |
| 34 |
MLP1N06CL |
SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level |
ON Semiconductor |
| 35 |
MLP1N06CL-D |
SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level N-Channel TO-220 |
ON Semiconductor |
| 36 |
MLP2N06CL |
SMARTDISCRETES MOSFET 2 Amps, 62 Volts, Logic Level |
ON Semiconductor |
| 37 |
MLP2N06CL-D |
SMARTDISCRETES MOSFET 2 Amps, 62 Volts, Logic Level N-Channel TO-220 |
ON Semiconductor |
| 38 |
MZP4759A |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 62 V. +-5% tolerance. |
Motorola |
| 39 |
MZP4759C |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 62 V. +-2% tolerance. |
Motorola |
| 40 |
MZP4759D |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 62 V. +-1% tolerance. |
Motorola |
| 41 |
MZT3000 |
10 watt zener transient suppressor. Nom zener voltage 62 V. |
Motorola |
| 42 |
MZT3335 |
50 watt zener transient suppressor. Nom zener voltage 62 V. |
Motorola |
| 43 |
P4KE170A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 44 |
P4KE170CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 45 |
P4KE180C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 46 |
P4KE440CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 418 V, Vbr(max) = 462 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 47 |
P6KE170CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 48 |
P6KE180 |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 49 |
P6KE180C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 50 |
P6KE440CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 418 V, Vbr(max) = 462 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 51 |
SMBJ5944A |
1.5W silicon surface mount zener diode. Zener voltage 62 V. Test current 6.0 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 52 |
SMBJ5944B |
1.5W silicon surface mount zener diode. Zener voltage 62 V. Test current 6.0 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 53 |
SMBJ5944C |
1.5W silicon surface mount zener diode. Zener voltage 62 V. Test current 6.0 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 54 |
SMBJ5944D |
1.5W silicon surface mount zener diode. Zener voltage 62 V. Test current 6.0 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
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