DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 632B

Datasheets found :: 73
Page: | 1 | 2 | 3 |
No. Part Name Description Manufacturer
31 K4S281632B-NC1L 128Mb SDRAM, 3.3V, LVTTL, 100MHz Samsung Electronic
32 K4S281632B-NL1H 128Mb SDRAM, 3.3V, LVTTL, 100MHz Samsung Electronic
33 K4S281632B-NL1L 128Mb SDRAM, 3.3V, LVTTL, 100MHz Samsung Electronic
34 K4S281632B-TC10 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
35 K4S281632B-TC1H 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
36 K4S281632B-TC1L 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
37 K4S281632B-TC75 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
38 K4S281632B-TC80 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
39 K4S281632B-TL10 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
40 K4S281632B-TL1H 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
41 K4S281632B-TL1L 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
42 K4S281632B-TL75 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
43 K4S281632B-TL80 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
44 K4S511632B-CL75 512Mb B-die SDRAM Specification Samsung Electronic
45 K4S511632B-TC75 512Mb B-die SDRAM Specification Samsung Electronic
46 K4S511632B-TCL75 512Mb B-die SDRAM Specification Samsung Electronic
47 K4S511632B-UC75 512Mb B-die SDRAM Specification Samsung Electronic
48 K4S561632B 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
49 K4S561632B-TC/L, TI/P 4MB x 16Bit x 4 Banks Synchronous DRAM Data Sheet Samsung Electronic
50 K4S561632B-TC/L1H 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
51 K4S561632B-TC/L1L 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
52 K4S561632B-TC/L75 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
53 MAX632BCPA CMOS fixed +12V output voltage, adjustable output with 2 resistors step-up switching regulator. 10% output accuracy. MAXIM - Dallas Semiconductor
54 MAX632BCSA CMOS fixed +12V output voltage, adjustable output with 2 resistors step-up switching regulator. 10% output accuracy. MAXIM - Dallas Semiconductor
55 MAX632BC_D CMOS fixed +12V output voltage, adjustable output with 2 resistors step-up switching regulator. 10% output accuracy. MAXIM - Dallas Semiconductor
56 MAX632BEJA CMOS fixed +12V output voltage, adjustable output with 2 resistors step-up switching regulator. 10% output accuracy. MAXIM - Dallas Semiconductor
57 MAX632BEPA CMOS fixed +12V output voltage, adjustable output with 2 resistors step-up switching regulator. 10% output accuracy. MAXIM - Dallas Semiconductor
58 MAX632BESA CMOS fixed +12V output voltage, adjustable output with 2 resistors step-up switching regulator. 10% output accuracy. MAXIM - Dallas Semiconductor
59 MAX632BMJA CMOS fixed +12V output voltage, adjustable output with 2 resistors step-up switching regulator. 10% output accuracy. MAXIM - Dallas Semiconductor
60 MH25632BJ-10 Access time: 100 ns, 265K x 4 bit dynamic RAM Mitsubishi Electric Corporation


Datasheets found :: 73
Page: | 1 | 2 | 3 |



© 2024 - www Datasheet Catalog com