No. |
Part Name |
Description |
Manufacturer |
31 |
2N2643 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
32 |
2N2643 |
Silicon NPN Transistor |
Motorola |
33 |
2N2643 |
DUAL AMPLIFIER TRANSISTORS NPN SILICON |
Motorola |
34 |
2N2643 |
DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNT |
New Jersey Semiconductor |
35 |
2N2643 |
Silicon transistor differential amplifiers |
SGS-ATES |
36 |
2N2643 |
Silicon transistor NPN differential amplifiers |
Sprague |
37 |
2N3643 |
Silicon NPN Transistor |
Motorola |
38 |
2N3643 |
Trans GP BJT NPN 30V 0.5A |
New Jersey Semiconductor |
39 |
2N5643 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
40 |
2N5643 |
NPN silicon RF power transistor 40W - 175MHz |
Motorola |
41 |
2N5643 |
Trans GP BJT NPN 35V 5A 4-Pin Style M135 |
New Jersey Semiconductor |
42 |
2N5643 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 60W; VHF power transistor |
SGS Thomson Microelectronics |
43 |
2N5643 |
7W / 20W / 40W, 28V, VHF POWER TRANSISTOR |
ST Microelectronics |
44 |
2N643 |
Germanium PNP Transistor |
Motorola |
45 |
2N6430 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
46 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
47 |
2N6430 |
Trans GP BJT NPN 200V 0.1A 3-Pin TO-18 Box |
New Jersey Semiconductor |
48 |
2N6431 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
49 |
2N6431 |
Trans GP BJT NPN 300V 0.1A 3-Pin TO-18 Box |
New Jersey Semiconductor |
50 |
2N6432 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
51 |
2N6432 |
Trans GP BJT PNP 200V 0.1A 3-Pin TO-18 Box |
New Jersey Semiconductor |
52 |
2N6433 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
53 |
2N6433 |
Trans GP BJT PNP 300V 0.1A 3-Pin TO-18 Box |
New Jersey Semiconductor |
54 |
2N6436 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
55 |
2N6436 |
POWER TRANSISTORS(25A,200W) |
MOSPEC Semiconductor |
56 |
2N6436 |
Trans GP BJT PNP 80V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
57 |
2N6436 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
58 |
2N6436A |
Silicon PNP Power Transistor |
IPRS Baneasa |
59 |
2N6437 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
60 |
2N6437 |
POWER TRANSISTORS(25A,200W) |
MOSPEC Semiconductor |
| | | |