No. |
Part Name |
Description |
Manufacturer |
31 |
5962R9655101VEA |
RadHard MSI: SMD. Dual 4-input multiplexer w/three-state outputs. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
32 |
5962R9655101VEC |
RadHard MSI: SMD. Dual 4-input multiplexer w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
33 |
5962R9655101VEX |
RadHard MSI: SMD. Dual 4-input multiplexer w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
34 |
5962R9655101VXA |
RadHard MSI: SMD. Dual 4-input multiplexer w/three-state outputs. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
35 |
5962R9655101VXC |
RadHard MSI: SMD. Dual 4-input multiplexer w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
36 |
5962R9655101VXX |
RadHard MSI: SMD. Dual 4-input multiplexer w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
37 |
TPS65510 |
Low Power Battery Backup IC with Integrated Boost Converter |
Texas Instruments |
38 |
TPS65510RGTR |
Low Power Battery Backup IC with Integrated Boost Converter 16-QFN -40 to 85 |
Texas Instruments |
39 |
TPS65510RGTT |
Low Power Battery Backup IC with Integrated Boost Converter 16-QFN -40 to 85 |
Texas Instruments |
40 |
UPD65510 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
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