| No. |
Part Name |
Description |
Manufacturer |
| 31 |
5962R9658901VRA |
RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 32 |
5962R9658901VRC |
RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 33 |
5962R9658901VRX |
RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 34 |
5962R9658901VXA |
RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 35 |
5962R9658901VXC |
RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 36 |
5962R9658901VXX |
RadHard MSI: SMD. Octal transparent latches w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si). |
Aeroflex Circuit Technology |
| 37 |
BGA6589 |
MMIC wideband medium power amplifier |
NXP Semiconductors |
| 38 |
BGA6589 |
MMIC wideband medium power amplifier |
Philips |
| 39 |
F6589 |
ULTRA THIN MCP ASSEMBLY WITH CENTER HOLE |
Hamamatsu Corporation |
| 40 |
MMBT6589T1 |
High Current Surface Mount PNP Silicon Switching Transfer for Load Management in Portable Applications |
ON Semiconductor |
| 41 |
MMBT6589T1-D |
High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
ON Semiconductor |
| 42 |
MSM66589 |
OLMS-66K Series CMOS 16-Bit Microcontroller |
OKI electronic components |
| 43 |
MSM66589-XXXGS-BK |
OLMS-66K series CMOS 16-bit microcontroller |
OKI electronic components |
| 44 |
NST6589 |
High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
ON Semiconductor |
| 45 |
SGA-6589 |
DC-4000 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +32.5 dBm typ. at 850 MHz |
Stanford Microdevices |
| 46 |
UPD65890 |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 47 |
UPD65890GD-XXX-LML |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 48 |
UPD65890GL-XXX-NMU |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 49 |
UPD65890GM-XXX-8ED |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 50 |
UPD65890GN-XXX-LMU |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 51 |
UPD65893 |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 52 |
UPD65893GD-XXX-LML |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 53 |
UPD65893GJ-XXX-UEN |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 54 |
UPD65893GL-XXX-NMU |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 55 |
UPD65893GN-XXX-LMU |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 56 |
UPD65894 |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 57 |
UPD65894GJ-XXX-UEN |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| | | |
