No. |
Part Name |
Description |
Manufacturer |
31 |
2N2666 |
Germanium PNP Transistor |
Motorola |
32 |
2N2666 |
Germanium PNP Power Transistor, TO-5 package |
Silicon Transistor Corporation |
33 |
2N3666 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
34 |
2N3666 |
Silicon NPN Transistor |
Motorola |
35 |
2N3666 |
Medium Power NPN Transistor |
National Semiconductor |
36 |
2N3666 |
Silicon NPN planar general purpose transistor |
Transitron Electronic |
37 |
2N5666 |
NPN Transistor |
Microsemi |
38 |
2N5666 |
Trans GP BJT NPN 200V 5A 3-Pin TO-5 |
New Jersey Semiconductor |
39 |
2N5666 |
Chip Type 2C5664 Geometry 9221 Polarity NPN |
Semicoa Semiconductor |
40 |
2N5666S |
NPN Transistor |
Microsemi |
41 |
2N5666U3 |
NPN Transistor |
Microsemi |
42 |
2N6660 |
TMOS SWITCHING FET TRANSISTORS |
Motorola |
43 |
2N6660 |
Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD |
New Jersey Semiconductor |
44 |
2N6660 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
45 |
2N6660 |
N-Channel 60-V (D-S) Single and Quad MOSFETs |
Vishay |
46 |
2N6661 |
N-Channel Enhancement Mode MOSFETs |
Microchip |
47 |
2N6661 |
TMOS SWITCHING FET TRANSISTORS |
Motorola |
48 |
2N6661 |
Trans MOSFET N-CH 90V 0.35A 3-Pin TO-39 |
New Jersey Semiconductor |
49 |
2N6661 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
50 |
2N6661 |
MOSPOWER N-Channel Enhancement Mode Transistor 80V 0.28A |
Siliconix |
51 |
2N6661 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
52 |
2N6661 |
N-Channel 80-V and 90-V (D-S) MOSFETS |
Vishay |
53 |
2N6666 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS |
Boca Semiconductor Corporation |
54 |
2N6666 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS |
Boca Semiconductor Corporation |
55 |
2N6666 |
Leaded Power Transistor Darlington |
Central Semiconductor |
56 |
2N6666 |
Leaded Power Transistor Darlington |
Central Semiconductor |
57 |
2N6666 |
10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
58 |
2N6666 |
10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
59 |
2N6666 |
POWER TRANSISTORS(65W) |
MOSPEC Semiconductor |
60 |
2N6666 |
POWER TRANSISTORS(65W) |
MOSPEC Semiconductor |
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