No. |
Part Name |
Description |
Manufacturer |
31 |
2N6751 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
32 |
2N6751 |
Bipolar NPN Device |
SemeLAB |
33 |
2N6752 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
34 |
2N6752 |
Trans GP BJT NPN 450V 10A |
New Jersey Semiconductor |
35 |
2N6752 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
36 |
2N6753 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
37 |
2N6753 |
Trans GP BJT NPN 500V 10A |
New Jersey Semiconductor |
38 |
2N6753 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
39 |
2N6753 |
Bipolar NPN Device |
SemeLAB |
40 |
2N6754 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
41 |
2N6754 |
Trans GP BJT NPN 500V 10A |
New Jersey Semiconductor |
42 |
2N6754 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
43 |
2N6754 |
Bipolar NPN Device |
SemeLAB |
44 |
2N6755 |
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V |
Fairchild Semiconductor |
45 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
46 |
2N6755 |
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
47 |
2N6756 |
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V |
Fairchild Semiconductor |
48 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
49 |
2N6756 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
50 |
2N6756 |
N-Channel |
Microsemi |
51 |
2N6756 |
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
52 |
2N6756 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
53 |
2N6756E3 |
N-Channel |
Microsemi |
54 |
2N6757 |
N-Channel Power MOSFETs/ 9A/ 150V/200V |
Fairchild Semiconductor |
55 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
56 |
2N6758 |
N-Channel Power MOSFETs/ 9A/ 150V/200V |
Fairchild Semiconductor |
57 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
58 |
2N6758 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
59 |
2N6758 |
N-Channel |
Microsemi |
60 |
2N6758 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
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