| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BD679A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 32 |
BD679A |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 33 |
BD679A |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
ST Microelectronics |
| 34 |
BD679AS |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 35 |
BD679ASTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 36 |
BD680A |
40.000W Darlington PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 750 hFE. Complementary BD679A |
Continental Device India Limited |
| 37 |
FDMC6679AZ |
-30V P-Channel Power Trench� MOSFET |
Fairchild Semiconductor |
| 38 |
FDS6679AZ |
-30V P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
| 39 |
MAX9679A |
12-Channel, 10-Bit Programmable Gamma and VCOM Reference Voltages |
MAXIM - Dallas Semiconductor |
| 40 |
MAX9679AETG+ |
12-Channel, 10-Bit Programmable Gamma and VCOM Reference Voltages |
MAXIM - Dallas Semiconductor |
| 41 |
MAX9679AETG+T |
12-Channel, 10-Bit Programmable Gamma and VCOM Reference Voltages |
MAXIM - Dallas Semiconductor |
| 42 |
SMV1679A |
VOLTAGE CONTROLLED OSCILLATOR |
Z communications |
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