DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 6AP

Datasheets found :: 1003
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 28C256API-1 High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
32 28C256API-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. Turbo IC
33 28C256API-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. Turbo IC
34 28C256API-2 High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
35 28C256API-3 High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
36 28C256API-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
37 28C256API-4 High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
38 28C256API-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
39 28C256APM-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. Turbo IC
40 28C256APM-1 High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
41 28C256APM-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. Turbo IC
42 28C256APM-2 High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
43 28C256APM-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
44 28C256APM-3 High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
45 28C256APM-4 High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
46 28C256APM-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
47 3626AP Low Drift INSTRUMENTATION AMPLIFIER Burr Brown
48 74ABT646APW Octal bus transceiver/register; 3-state NXP Semiconductors
49 74ABT646APW Octal bus transceiver/register 3-State Philips
50 74HC4046APW Phase-locked-loop with VCO Nexperia
51 74HC4046APW Phase-locked-loop with VCO NXP Semiconductors
52 74HC4046APW 74HC/HCT4046A; Phase-locked-loop with VCO Philips
53 74HCT9046APW PLL with band gap controlled VCO NXP Semiconductors
54 74HCT9046APW 74HCT9046A; PLL with band gap controlled VCO Philips
55 74LVC06APW Hex inverter with open-drain outputs Nexperia
56 74LVC06APW Hex inverter with open-drain outputs NXP Semiconductors
57 74LVC06APW Hex inverter with open-drain outputs Philips
58 74LVC06APW-Q100 Hex inverter with open-drain outputs Nexperia
59 74LVC06APW-Q100 Hex inverter with open-drain outputs NXP Semiconductors
60 74LVC126APW Quad buffer/line driver with 5 V tolerant input/outputs; 3-state Nexperia


Datasheets found :: 1003
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



© 2024 - www Datasheet Catalog com