No. |
Part Name |
Description |
Manufacturer |
31 |
AT28HC256E-12PC |
256 32K x 8 High Speed CMOS E2PROM |
Atmel |
32 |
AT28HC256E-12PI |
256 32K x 8 High Speed CMOS E2PROM |
Atmel |
33 |
AT28HC256E-12SC |
256 32K x 8 High Speed CMOS E2PROM |
Atmel |
34 |
AT28HC256E-12SI |
256 32K x 8 High Speed CMOS E2PROM |
Atmel |
35 |
AT28HC256E-12TC |
256 32K x 8 High Speed CMOS E2PROM |
Atmel |
36 |
AT28HC256E-12TI |
256 32K x 8 High Speed CMOS E2PROM |
Atmel |
37 |
AT28HC256E-12UM/883 |
256 32K x 8 High Speed CMOS E2PROM |
Atmel |
38 |
AT28HC256E-12UM/883 |
256 32K x 8 High Speed Parallel EEPROMs |
Atmel |
39 |
BGY26E-1F |
IMPATT Diode |
Siemens |
40 |
BGY26E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
41 |
DS1806E-100 |
Digital Sextet Potentiometer |
MAXIM - Dallas Semiconductor |
42 |
DS1806E-100+ |
Digital Sextet Potentiometer |
MAXIM - Dallas Semiconductor |
43 |
GS832236E-133I |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
GSI Technology |
44 |
GS832236E-150 |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
GSI Technology |
45 |
GS832236E-150I |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
GSI Technology |
46 |
GS832236E-166 |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
GSI Technology |
47 |
GS832236E-166I |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
GSI Technology |
48 |
GS8644Z36E-133 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
49 |
GS8644Z36E-133I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
50 |
GS8644Z36E-150I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
51 |
GS8644Z36E-166 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
52 |
GS8644Z36E-166I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
53 |
ISPLSI1016E-100LJ |
In-System Programmable High Density PLD |
Lattice Semiconductor |
54 |
ISPLSI1016E-100LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
55 |
ISPLSI1016E-125LJ |
In-System Programmable High Density PLD |
Lattice Semiconductor |
56 |
ISPLSI1016E-125LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
57 |
ISPLSI2096E-100LQ128 |
In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
58 |
ISPLSI2096E-100LT128 |
In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
59 |
ISPLSI2096E-135LQ128 |
In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
60 |
ISPLSI2096E-135LT128 |
In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
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