| No. |
Part Name |
Description |
Manufacturer |
| 31 |
FQP6N80C |
800V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 32 |
FQPF6N80 |
800V N-Channel MOSFET |
Fairchild Semiconductor |
| 33 |
FQPF6N80C |
800V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 34 |
FQPF6N80T |
N-Channel QFET� MOSFET 800V, 3.3A, 1.95? |
Fairchild Semiconductor |
| 35 |
IXTH6N80 |
N-Channel Enhancement Mode |
IXYS Corporation |
| 36 |
IXTH6N80A |
N-Channel Enhancement Mode |
IXYS Corporation |
| 37 |
IXTM6N80 |
N-Channel Enhancement Mode |
IXYS Corporation |
| 38 |
IXTM6N80A |
N-Channel Enhancement Mode |
IXYS Corporation |
| 39 |
JBT6N81S |
Single-Chip System LSI for RFID Card |
TOSHIBA |
| 40 |
LF356N8 |
JFET-Input Operational Amplifiers Low Supply Current High Speed |
Linear Technology |
| 41 |
LL1608-FSL6N8J |
Multilayer Chip Inductors |
TOKO |
| 42 |
LL2012-FHL6N8J |
Multilayer Chip Inductors |
TOKO |
| 43 |
LL2012-FHL6N8J |
Multilayer Chip Inductors |
TOKO |
| 44 |
LLQ1608-A6N8 |
Chip Inductors |
TOKO |
| 45 |
MTY16N80E |
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM |
Motorola |
| 46 |
MTY16N80E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 47 |
MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor |
ON Semiconductor |
| 48 |
SPA06N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
Infineon |
| 49 |
SPD06N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
Infineon |
| 50 |
SPP06N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
Infineon |
| 51 |
SSP6N80A |
Advanced Power MOSFET |
Fairchild Semiconductor |
| 52 |
STB6N80K5 |
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in D2PAK package |
ST Microelectronics |
| 53 |
STD6N80K5 |
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package |
ST Microelectronics |
| 54 |
STF6N80K5 |
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package |
ST Microelectronics |
| 55 |
STFI6N80K5 |
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 56 |
STI6N80K5 |
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in I2PAK package |
ST Microelectronics |
| 57 |
STP6N80K5 |
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package |
ST Microelectronics |
| 58 |
T16N8 |
16 AMPS 800V THYRISTOR |
IPRS Baneasa |
| 59 |
ZXMC10A816N8 |
100V SO8 COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET |
Diodes |
| 60 |
ZXMC10A816N8TC |
100V SO8 COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET |
Diodes |
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