No. |
Part Name |
Description |
Manufacturer |
31 |
KS826S04 |
Schottky barrier diode |
COLLMER SEMICONDUCTOR INC |
32 |
KS826S04 |
SCHOTTKY BARRIER DIODE |
Fuji Electric |
33 |
M366S0424DTS |
4M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
34 |
M366S0424DTS |
4M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
35 |
M366S0424ETS |
4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
36 |
M366S0424FTS |
4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
37 |
M366S0823DTS |
8M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
38 |
M366S0823DTS |
8M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
39 |
M366S0823DTS |
8M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
40 |
M366S0823DTS |
8M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
41 |
M366S0823DTS |
8M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
42 |
M366S0823DTS |
8M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
43 |
M366S0823ETS |
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
44 |
M366S0823FTS |
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
45 |
M366S0824DT0 |
8M x 64 SDRAM DIMM based on 4M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
46 |
M366S0824ET0 |
8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet |
Samsung Electronic |
47 |
M366S0924DTS |
8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet |
Samsung Electronic |
48 |
M366S0924ETS-C7A |
SDRAM Unbuffered Module |
Samsung Electronic |
49 |
M366S0924FTS |
SDRAM Unbuffered Module |
Samsung Electronic |
50 |
M366S0924FTS-C7A |
SDRAM Unbuffered Module |
Samsung Electronic |
51 |
MIP6S00MTSCF |
AC-DC converter / Power supply IC (IPD) |
Panasonic |
52 |
MK41T56S00 |
512 bit 64b x8 Serial Access TIMEKEEPER SRAM |
ST Microelectronics |
53 |
MK41T56S00TR |
512 bit 64b x8 Serial Access TIMEKEEPER SRAM |
ST Microelectronics |
54 |
MKI41T56S00 |
512 bit 64b x8 Serial Access TIMEKEEPER SRAM |
ST Microelectronics |
55 |
MKI41T56S00TR |
512 bit 64b x8 Serial Access TIMEKEEPER SRAM |
ST Microelectronics |
56 |
MUX36S08 |
MUX36xxx 36-V, Low-Capacitance, Low-Leakage-Current, Precision, Analog Multiplexers 16-TSSOP -40 to 125 |
Texas Instruments |
57 |
MUX36S08IPW |
MUX36xxx 36-V, Low-Capacitance, Low-Leakage-Current, Precision, Analog Multiplexers 16-TSSOP -40 to 125 |
Texas Instruments |
58 |
MUX36S08IPWR |
MUX36xxx 36-V, Low-Capacitance, Low-Leakage-Current, Precision, Analog Multiplexers 16-TSSOP -40 to 125 |
Texas Instruments |
59 |
MW6S010 |
RF Power Field Effect Transistor |
Freescale (Motorola) |
60 |
MW6S010GMR1 |
RF Power Field Effect Transistor |
Freescale (Motorola) |
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