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Datasheets for 6S40

Datasheets found :: 53
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No. Part Name Description Manufacturer
31 KM416S4030CT-FH 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
32 KM416S4030CT-FL 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
33 KM416S4030CT-G 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
34 KM416S4030CT-G7 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz Samsung Electronic
35 KM416S4030CT-G8 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz Samsung Electronic
36 KM416S4030CT-GH 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Samsung Electronic
37 KM416S4030CT-GL 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Samsung Electronic
38 KM416S4030CT-L10 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Samsung Electronic
39 KMM366S403CTL PC66 SDRAM MODULE Samsung Electronic
40 KMM366S403CTL-G0 PC66 SDRAM MODULE Samsung Electronic
41 M2V56S40AKT 256M Synchronous DRAM Mitsubishi Electric Corporation
42 M2V56S40AKT-5 256M Synchronous DRAM Mitsubishi Electric Corporation
43 M2V56S40AKT-6 256M Synchronous DRAM Mitsubishi Electric Corporation
44 M2V56S40AKT-7 256M Synchronous DRAM Mitsubishi Electric Corporation
45 M2V56S40ATP 256M Synchronous DRAM Mitsubishi Electric Corporation
46 M2V56S40ATP-5 256M Synchronous DRAM Mitsubishi Electric Corporation
47 M2V56S40ATP-6 256M Synchronous DRAM Mitsubishi Electric Corporation
48 M2V56S40ATP-7 256M Synchronous DRAM Mitsubishi Electric Corporation
49 M2V56S40TP 256M Synchronous DRAM Mitsubishi Electric Corporation
50 M2V56S40TP-6 256M synchronous DRAM Mitsubishi Electric Corporation
51 M2V56S40TP-7 256M synchronous DRAM Mitsubishi Electric Corporation
52 M2V56S40TP-8 256M synchronous DRAM Mitsubishi Electric Corporation
53 S16S40 SCHOTTKY BARRIER RECTIFIERS(16A,30-60V) MOSPEC Semiconductor


Datasheets found :: 53
Page: | 1 | 2 |



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