No. |
Part Name |
Description |
Manufacturer |
31 |
KM416S4030CT-FH |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
32 |
KM416S4030CT-FL |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
33 |
KM416S4030CT-G |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
34 |
KM416S4030CT-G7 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz |
Samsung Electronic |
35 |
KM416S4030CT-G8 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz |
Samsung Electronic |
36 |
KM416S4030CT-GH |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz |
Samsung Electronic |
37 |
KM416S4030CT-GL |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz |
Samsung Electronic |
38 |
KM416S4030CT-L10 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz |
Samsung Electronic |
39 |
KMM366S403CTL |
PC66 SDRAM MODULE |
Samsung Electronic |
40 |
KMM366S403CTL-G0 |
PC66 SDRAM MODULE |
Samsung Electronic |
41 |
M2V56S40AKT |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
42 |
M2V56S40AKT-5 |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
43 |
M2V56S40AKT-6 |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
44 |
M2V56S40AKT-7 |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
45 |
M2V56S40ATP |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
46 |
M2V56S40ATP-5 |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
47 |
M2V56S40ATP-6 |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
48 |
M2V56S40ATP-7 |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
49 |
M2V56S40TP |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
50 |
M2V56S40TP-6 |
256M synchronous DRAM |
Mitsubishi Electric Corporation |
51 |
M2V56S40TP-7 |
256M synchronous DRAM |
Mitsubishi Electric Corporation |
52 |
M2V56S40TP-8 |
256M synchronous DRAM |
Mitsubishi Electric Corporation |
53 |
S16S40 |
SCHOTTKY BARRIER RECTIFIERS(16A,30-60V) |
MOSPEC Semiconductor |
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