| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N5914A |
1.5 W, silicon zener diode. Zener voltage 3.6V. Test current 104.2 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 32 |
1N5914C |
1.5 W, silicon zener diode. Zener voltage 3.6V. Test current 104.2 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 33 |
1N5914D |
1.5 W, silicon zener diode. Zener voltage 3.6V. Test current 104.2 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 34 |
1N5919 |
1.5 W, silicon zener diode. Zener voltage 5.6V. Test current 66.9 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 35 |
1N5919A |
1.5 W, silicon zener diode. Zener voltage 5.6V. Test current 66.9 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 36 |
1N5919C |
1.5 W, silicon zener diode. Zener voltage 5.6V. Test current 66.9 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 37 |
1N5919D |
1.5 W, silicon zener diode. Zener voltage 5.6V. Test current 66.9 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 38 |
1N5930 |
1.5 W, silicon zener diode. Zener voltage 16V. Test current 23.4 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 39 |
1N5930A |
1.5 W, silicon zener diode. Zener voltage 16V. Test current 23.4 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 40 |
1N5930C |
1.5 W, silicon zener diode. Zener voltage 16V. Test current 23.4 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 41 |
1N5930D |
1.5 W, silicon zener diode. Zener voltage 16V. Test current 23.4 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 42 |
1N5938 |
1.5 W, silicon zener diode. Zener voltage 36V. Test current 10.4 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 43 |
1N5938A |
1.5 W, silicon zener diode. Zener voltage 36V. Test current 10.4 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 44 |
1N5938C |
1.5 W, silicon zener diode. Zener voltage 36V. Test current 10.4 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 45 |
1N5938D |
1.5 W, silicon zener diode. Zener voltage 36V. Test current 10.4 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 46 |
1N966 |
0.5W, silicon zener diode. Zener voltage 16V. Test current 7.8mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 47 |
1N966A |
0.5W, silicon zener diode. Zener voltage 16V. Test current 7.8mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 48 |
1N974 |
0.5W, silicon zener diode. Zener voltage 36V. Test current 3.4mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 49 |
1N974A |
0.5W, silicon zener diode. Zener voltage 36V. Test current 3.4mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 50 |
1N979 |
0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 51 |
1N979A |
0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 52 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 53 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 54 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
| 55 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 56 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 57 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 58 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 59 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 60 |
FDLL482B |
General purpose low leakage diode. Working inverse voltage 36V. |
Fairchild Semiconductor |
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