| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N4750 |
27.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 32 |
1N4750 |
1 W silicon zener diode. Nominal zener voltage 27.0 V. |
Fairchild Semiconductor |
| 33 |
1N4750A |
27.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 34 |
1N4756 |
47.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 35 |
1N4756A |
47.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 36 |
1N5247 |
500 mW silicon zener diode. Nominal zener voltage 17.0 V. |
Fairchild Semiconductor |
| 37 |
1N5247B |
17.0V 500 mW Zener Diode |
Continental Device India Limited |
| 38 |
1N5248A |
18 V, 7.0 mA, zener diode |
Leshan Radio Company |
| 39 |
1N5248C |
18 V, 7.0 mA, zener diode |
Leshan Radio Company |
| 40 |
1N5248D |
18 V, 7.0 mA, zener diode |
Leshan Radio Company |
| 41 |
1N5254 |
500 mW silicon zener diode. Nominal zener voltage 27.0 V. |
Fairchild Semiconductor |
| 42 |
1N5254B |
27.0V 500 mW Zener Diode |
Continental Device India Limited |
| 43 |
1N5261B |
47.0V 500 mW Zener Diode |
Continental Device India Limited |
| 44 |
1N5537A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 17.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 45 |
1N5537B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 17.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 46 |
1N5631A |
Diode TVS Single Uni-Dir 7.02V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 47 |
1N5746B |
27.0V Voltage Reference Diode |
Philips |
| 48 |
1N5752B |
47.0V Voltage Reference Diode |
Philips |
| 49 |
1N6269A |
Diode TVS Single Uni-Dir 7.02V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 50 |
1N751 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 51 |
1N753 |
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA). |
Fairchild Semiconductor |
| 52 |
1N758 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 53 |
1N832 |
Silicon Microwave X-band Mixer; NF=9.5 to 7.0 dB |
Motorola |
| 54 |
1N832A |
Silicon Microwave X-band Mixer; NF=9.5 to 7.0 dB |
Motorola |
| 55 |
1N832B |
Silicon Microwave X-band Mixer; NF=9.5 to 7.0 dB |
Motorola |
| 56 |
1N967 |
0.5W, silicon zener diode. Zener voltage 18V. Test current 7.0mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 57 |
1N967A |
18 V, 7.0 mA, silicon planar zener diode |
Honey Technology |
| 58 |
1N967A |
0.5W, silicon zener diode. Zener voltage 18V. Test current 7.0mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 59 |
1N967B |
18 V, 7.0 mA, silicon planar zener diode |
Honey Technology |
| 60 |
1N971 |
27.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| | | |
