No. |
Part Name |
Description |
Manufacturer |
31 |
IP1827TRPBF |
25A IpowIR Regulator with 5V or 3.3V bias in 7.7x7.7 |
International Rectifier |
32 |
IP1837 |
35A IpowIR Regulator with 5V or 3.3V bias in 7.7x7.7 |
International Rectifier |
33 |
IP1837 |
35A IpowIR Regulator with 5V or 3.3V bias in 7.7x7.7 |
International Rectifier |
34 |
IP1837TRPBF |
35A IpowIR Regulator with 5V or 3.3V bias in 7.7x7.7 |
International Rectifier |
35 |
IP1837TRPBF |
35A IpowIR Regulator with 5V or 3.3V bias in 7.7x7.7 |
International Rectifier |
36 |
IRFU014 |
Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A) |
International Rectifier |
37 |
KZY82 |
Zener diode for stabilisation 7.7V |
Tesla Elektronicke |
38 |
LVA477A |
Diode Zener Single 7.7V 2.6% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
39 |
M670-167.7097 |
VOLTAGE CONTROLLED SAW OSCILLATOR |
Integrated Circuit Systems |
40 |
MAX1428 |
15-Bit, 100Msps ADC with -77.7dBFS Noise Floor for Baseband Applications |
MAXIM - Dallas Semiconductor |
41 |
MAX1429 |
15-Bit, 100Msps ADC with -77.7dBFS Noise Floor for Baseband Applications |
MAXIM - Dallas Semiconductor |
42 |
MAX1429ETN |
15-Bit, 100Msps ADC with -77.7dBFS Noise Floor for Baseband Applications |
MAXIM - Dallas Semiconductor |
43 |
MAX1430 |
15-Bit, 100Msps ADC with -77.7dBFS Noise Floor for Baseband Applications |
MAXIM - Dallas Semiconductor |
44 |
MGFC36V7177A |
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
45 |
MGFC36V7785A |
7.7-8.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
46 |
MGFC39V7177A |
7.1-7.7GHz BAND 8W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
47 |
MGFC39V7785A |
7.7-8.5 GHz Band 8W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
48 |
MGFC40V7177 |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
49 |
MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
50 |
MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
51 |
MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
52 |
MGFC40V7785A |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
53 |
MGFC40V7785B |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
54 |
MGFC42V7785A |
7.7-8.5GHz Band 16W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
55 |
MHW7272A |
750 MHz, 27.7 dB Gain, 24 V 110–Channel CATV Amplifier Module |
Freescale (Motorola) |
56 |
MHW7272A |
MHW7272A 750 MHz, 27.7 dB Gain, 110-Channel CATV Amplifier Module |
Motorola |
57 |
MHW8272A |
870 MHz, 27.7 dB Gain, 24 V 128–Channel CATV Amplifier Module |
Freescale (Motorola) |
58 |
MHW8272A |
MHW8272A 870 MHz, 27.7 dB Gain, 128-Channel CATV Amplifier Module |
Motorola |
59 |
NDL7911PC477 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With FC-PC connector. ITU-T wavelengh 1547.72 nm. Frequency 193.7 THz. |
NEC |
60 |
NDL7911PD477 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With SC-PC connector. ITU-T wavelengh 1547.72 nm. Frequency 193.7 THz. |
NEC |
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