| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AS29LV800T-70RTI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time |
Alliance Semiconductor |
| 32 |
AS4C14400-70JC |
1M-bit � 4 CMOS DRAM fast page mode, single 5V power supply, 70ns |
Alliance Semiconductor |
| 33 |
AS4C14400-70TC |
1M-bit � 4 CMOS DRAM fast page mode, single 5V power supply, 70ns |
Alliance Semiconductor |
| 34 |
AS4C14405-70JC |
1M-bit � 4 CMOS DRAM EDO, single 5V power supply, 70ns |
Alliance Semiconductor |
| 35 |
AS4C14405-70TC |
1M-bit � 4 CMOS DRAM EDO, single 5V power supply, 70ns |
Alliance Semiconductor |
| 36 |
AT49F008A-70CC |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 37 |
AT49F008A-70CI |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 38 |
AT49F008A-70TC |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 39 |
AT49F008A-70TI |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 40 |
AT49F008AT-70CC |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 41 |
AT49F008AT-70CI |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 42 |
AT49F008AT-70TC |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 43 |
AT49F008AT-70TI |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 44 |
AT49F8192A-70CC |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 45 |
AT49F8192A-70CI |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 46 |
AT49F8192A-70RC |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 47 |
AT49F8192A-70RI |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 48 |
AT49F8192A-70TC |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 49 |
AT49F8192A-70TI |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 50 |
AT49F8192AT-70CC |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 51 |
AT49F8192AT-70CI |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 52 |
AT49F8192AT-70RC |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 53 |
AT49F8192AT-70RI |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 54 |
AT49F8192AT-70TC |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 55 |
AT49F8192AT-70TI |
70ns; 50mA; V(in): -0.6 to +6.25V; V(out): -0.6 to +0.6V; 8-megabit (1M x 8/512K x 16) falsh memory |
Atmel |
| 56 |
BS616UV2021AC70 |
70ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable |
Brilliance Semiconductor |
| 57 |
BS616UV2021AI70 |
70ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable |
Brilliance Semiconductor |
| 58 |
BS616UV2021DC70 |
70ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable |
Brilliance Semiconductor |
| 59 |
BS616UV2021DI70 |
70ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable |
Brilliance Semiconductor |
| 60 |
BS62LV2001DC-70 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 70ns |
Brilliance Semiconductor |
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