| No. |
Part Name |
Description |
Manufacturer |
| 31 |
DS1100LZ-175 |
3.3V 5-tap economy timing element (delay line), 175ns |
Dallas Semiconductor |
| 32 |
DS1100LZ-75 |
3.3V 5-tap economy timing element (delay line), 75ns |
Dallas Semiconductor |
| 33 |
DS1100M-175 |
5-tap economy timing element (delay line), 175ns |
Dallas Semiconductor |
| 34 |
DS1100M-75 |
5-tap economy timing element (delay line), 75ns |
Dallas Semiconductor |
| 35 |
DS1100U-175 |
5-tap economy timing element (delay line), 175ns |
Dallas Semiconductor |
| 36 |
DS1100U-75 |
5-tap economy timing element (delay line), 75ns |
Dallas Semiconductor |
| 37 |
DS1100Z-175 |
5-tap economy timing element (delay line), 175ns |
Dallas Semiconductor |
| 38 |
DS1100Z-75 |
5-tap economy timing element (delay line), 75ns |
Dallas Semiconductor |
| 39 |
DTV32 |
High Voltage Damper Diodes, Forward Current 10A, Reverse Voltage 1500V, Reverse Recovery Time 175ns |
Vishay |
| 40 |
DTV32B |
High Voltage Damper Diodes, Forward Current 10A, Reverse Voltage 1500V, Reverse Recovery Time 175ns |
Vishay |
| 41 |
DTV32F |
High Voltage Damper Diodes, Forward Current 10A, Reverse Voltage 1500V, Reverse Recovery Time 175ns |
Vishay |
| 42 |
GS8160E18T-166I |
75ns 166MHz 1M x 18 synchronous burst SRAM |
GSI Technology |
| 43 |
HM628128BLFP-75 |
75ns; V(cc): -0.5 to +7.0V; 1W; 1M SRAM (128-Kword x 8-bit) |
Hitachi Semiconductor |
| 44 |
HM628128BLFP-75SL |
75ns; V(cc): -0.5 to +7.0V; 1W; 1M SRAM (128-Kword x 8-bit) |
Hitachi Semiconductor |
| 45 |
HM628128BLT-75 |
75ns; V(cc): -0.5 to +7.0V; 1W; 1M SRAM (128-Kword x 8-bit) |
Hitachi Semiconductor |
| 46 |
HM628128BLT-75SL |
75ns; V(cc): -0.5 to +7.0V; 1W; 1M SRAM (128-Kword x 8-bit) |
Hitachi Semiconductor |
| 47 |
IM29C510 |
CMOS 16 x 16 Bit, 65ns (Commercial) 75ns (Military) Multiplier/Accumulator |
Intersil |
| 48 |
IS61LV6464-7PQ |
75ns; 7ns; 3.3V; 64K x 64 synchoronous pipelined static RAM |
ICSI |
| 49 |
IS61LV6464-7TQ |
75ns; 7ns; 3.3V; 64K x 64 synchoronous pipelined static RAM |
ICSI |
| 50 |
MK4027J-3 |
4096x1-bit dynamic RAM, 200ns acces time, 375ns cycle. |
Mostek |
| 51 |
MK4027N-3 |
4096x1-bit dynamic RAM, 200ns acces time, 375ns cycle. |
Mostek |
| 52 |
MK4096N-6 |
4096x1-bit dynamic RAM, 250ns acces time, 375ns cycle time, max. power 450mW. |
Mostek |
| 53 |
MK4096P-6 |
4096x1-bit dynamic RAM, 250ns acces time, 375ns cycle time, max. power 450mW. |
Mostek |
| 54 |
MXD1013C_D075 |
3-in-1 silicon delay line. Output delay 75ns. |
MAXIM - Dallas Semiconductor |
| 55 |
MXD1013PA075 |
3-in-1 silicon delay line. Output delay 75ns. |
MAXIM - Dallas Semiconductor |
| 56 |
MXD1013PD075 |
3-in-1 silicon delay line. Output delay 75ns. |
MAXIM - Dallas Semiconductor |
| 57 |
MXD1013SA075 |
3-in-1 silicon delay line. Output delay 75ns. |
MAXIM - Dallas Semiconductor |
| 58 |
MXD1013SE075 |
3-in-1 silicon delay line. Output delay 75ns. |
MAXIM - Dallas Semiconductor |
| 59 |
MXD1013UA075 |
3-in-1 silicon delay line. Output delay 75ns. |
MAXIM - Dallas Semiconductor |
| 60 |
SN74ALS175NSR |
Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear |
Texas Instruments |
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