| No. |
Part Name |
Description |
Manufacturer |
| 31 |
HSMY-C177 |
HSMY-C177 · Low Profile ChipLED |
Agilent (Hewlett-Packard) |
| 32 |
IRF140 |
28A/ 100V/ 0.077 Ohm/ N-Channel Power MOSFET |
Intersil |
| 33 |
IRF141 |
28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs |
Intersil |
| 34 |
IRF142 |
28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs |
Intersil |
| 35 |
IRF143 |
28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs |
Intersil |
| 36 |
IRF540 |
28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 37 |
IRFP140 |
31A, 100V, 0.077 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 38 |
KLM-844LRV |
Red, 6 V, size: 388 x 77 x 30 mm, LED dot matrix module |
AUK Corp |
| 39 |
LM2877P |
LM2877 Dual 4W Audio Power Amplifier |
National Semiconductor |
| 40 |
LPT-3535 |
Customizable, Kool-Mu, Powdered Iron and MPP Cores |
Vishay |
| 41 |
M5M29GB |
16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 42 |
M5M29GB160BVP |
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 43 |
M5M29GT160BVP |
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 44 |
MC68177P |
MC68177 FLEX Decoder IC |
Motorola |
| 45 |
MD51V64405 |
16 /777 /216-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
OKI electronic eomponets |
| 46 |
MH16M40AJD-6 |
FAST PAGE MODE ( 16 /777 /216-WORD BY 40-BIT ) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 47 |
MSP430FR6877 |
MSP430FR6877 16 MHz ULP Microcontroller featuring 64 KB FRAM, 2 KB SRAM, 83 IO, 16 ch ADC12, LCD 100-LQFP -40 to 85 |
Texas Instruments |
| 48 |
MSP430FR6877IPN |
MSP430FR6877 16 MHz ULP Microcontroller featuring 64 KB FRAM, 2 KB SRAM, 83 IO, 16 ch ADC12, LCD 80-LQFP -40 to 85 |
Texas Instruments |
| 49 |
MSP430FR6877IPNR |
MSP430FR6877 16 MHz ULP Microcontroller featuring 64 KB FRAM, 2 KB SRAM, 83 IO, 16 ch ADC12, LCD 80-LQFP -40 to 85 |
Texas Instruments |
| 50 |
MSP430FR6877IPZ |
MSP430FR6877 16 MHz ULP Microcontroller featuring 64 KB FRAM, 2 KB SRAM, 83 IO, 16 ch ADC12, LCD 100-LQFP -40 to 85 |
Texas Instruments |
| 51 |
MSP430FR6877IPZR |
MSP430FR6877 16 MHz ULP Microcontroller featuring 64 KB FRAM, 2 KB SRAM, 83 IO, 16 ch ADC12, LCD 100-LQFP -40 to 85 |
Texas Instruments |
| 52 |
MSP430FR6977 |
MSP430FR6977 16 MHz ULP Microcontroller featuring 64 KB FRAM, 2 KB SRAM, 83 IO, ADC12, LCD, AES 80-LQFP -40 to 85 |
Texas Instruments |
| 53 |
MSP430FR6977IPN |
MSP430FR6977 16 MHz ULP Microcontroller featuring 64 KB FRAM, 2 KB SRAM, 83 IO, ADC12, LCD, AES 80-LQFP -40 to 85 |
Texas Instruments |
| 54 |
MSP430FR6977IPNR |
MSP430FR6977 16 MHz ULP Microcontroller featuring 64 KB FRAM, 2 KB SRAM, 83 IO, ADC12, LCD, AES 80-LQFP -40 to 85 |
Texas Instruments |
| 55 |
MSP430FR6977IPZ |
MSP430FR6977 16 MHz ULP Microcontroller featuring 64 KB FRAM, 2 KB SRAM, 83 IO, ADC12, LCD, AES 100-LQFP -40 to 85 |
Texas Instruments |
| 56 |
MSP430FR6977IPZR |
MSP430FR6977 16 MHz ULP Microcontroller featuring 64 KB FRAM, 2 KB SRAM, 83 IO, ADC12, LCD, AES 100-LQFP -40 to 85 |
Texas Instruments |
| 57 |
NX8560LJ287-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1528.77 nm. Frequency 196.10 THz. FC-UPC connector. |
NEC |
| 58 |
NX8560LJ287-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1528.77 nm. Frequency 196.10 THz. SC-UPC connector. |
NEC |
| 59 |
NX8562LB287-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1528.77 nm. Frequency 196.10 THz. Anode ground. FC-PC connector. |
NEC |
| 60 |
NX8562LB687-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1568.77 nm. Frequency 191.10 THz. Anode ground. FC-PC connector. |
NEC |
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