| No. |
Part Name |
Description |
Manufacturer |
| 31 |
679-3 |
Single Phase Bridge |
Microsemi |
| 32 |
679-4 |
Single Phase Bridge |
Microsemi |
| 33 |
679-5 |
Single Phase Bridge |
Microsemi |
| 34 |
679-6 |
Single Phase Bridge |
Microsemi |
| 35 |
79-04 |
Motorola case, dimensions, similar with TO-205AD |
Motorola |
| 36 |
79-05 |
Motorola case, dimensions, similar with TO-39 CE |
Motorola |
| 37 |
79-05 |
CASE DIMENSIONS |
Motorola |
| 38 |
AD9879-EB |
Mixed Signal Front End Set Top Box, Cable Modem |
Analog Devices |
| 39 |
AS179-000 |
PHEMT GaAs IC High Linearity 3 V T/R SPDT Switch 0.1-2.5 GHz |
Skyworks Solutions |
| 40 |
AS179-92 |
PHEMT GaAs IC SPDT Switch DC�3 GHz |
Alpha Industries Inc |
| 41 |
AS179-92 |
PHEMT GaAs IC SPDT Switch DC-3 GHz |
Skyworks Solutions |
| 42 |
AS179-92LF |
PHEMT GaAs IC SPDT Switch 0.02-3 GHz |
Skyworks Solutions |
| 43 |
BA779-2 |
Surface mount switching diode. |
Jinan Gude Electronic Device |
| 44 |
BA779-2 |
Dual RF PIN Diodes |
Vishay |
| 45 |
BB679-02V |
Latest Silicon Discretes - Varactordiode for tuning wideband CATV Tuners |
Infineon |
| 46 |
BCW79-10 |
PNP Silicon Transistor |
Siemens |
| 47 |
BCW79-16 |
PNP Silicon Transistor |
Siemens |
| 48 |
BCW79-25 |
PNP Silicon Transistor |
Siemens |
| 49 |
BCX79-IX |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 50 |
BCX79-VII |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 51 |
BCX79-VIII |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 52 |
BCX79-X |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 53 |
BCY79-IX |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 54 |
BCY79-VIII |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 55 |
BCY79-X |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 56 |
BD179-10 |
30.000W Switching NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 63 - 160 hFE. |
Continental Device India Limited |
| 57 |
BD179-10 |
Plastic Medium Power Silicon NPNP Transistor |
Motorola |
| 58 |
BD179-10 |
POWER TRANSISTORS NPN SILICON |
ON Semiconductor |
| 59 |
BD179-6 |
30.000W Switching NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
| 60 |
BD179-6 |
3A plastic 30W medium power silicon NPN transistor |
Motorola |
| | | |
