No. |
Part Name |
Description |
Manufacturer |
31 |
2N2796 |
Germanium PNP Transistor |
Motorola |
32 |
2N2796 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
33 |
2N3796 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
34 |
2N3796 |
N-Channel MOS (Field-Effect Transistor) |
Motorola |
35 |
2N3796 |
MOSFET / Low Power Audio |
Motorola |
36 |
2N3796 |
Trans GP BJT PNP 60V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
37 |
2N5796 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
38 |
2N5796 |
PNP Dual Transistors |
Microsemi |
39 |
2N5796 |
PNP silicon dual transistor |
Motorola |
40 |
2N5796 |
Dual Transistor PNP silicon |
Motorola |
41 |
2N5796A |
PNP Transistor |
Microsemi |
42 |
2N5796AU |
PNP Transistor |
Microsemi |
43 |
2N5796AUC |
PNP Transistor |
Microsemi |
44 |
2N5796U |
PNP Dual Transistors |
Microsemi |
45 |
2N5796U |
Surface mount dual PNP transistor |
Optek Technology |
46 |
2N5796UC |
PNP Transistor |
Microsemi |
47 |
2N6796 |
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
48 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
49 |
2N6796 |
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package |
International Rectifier |
50 |
2N6796 |
8A/ 100V/ 0.180 Ohm/ N-Channel Power MOSFET |
Intersil |
51 |
2N6796 |
N-Channel |
Microsemi |
52 |
2N6796 |
Trans MOSFET N-CH 100V 8A 3-Pin TO-39 |
New Jersey Semiconductor |
53 |
2N6796 |
N-channel enhancement mode MOSFET power transistor |
Omnirel |
54 |
2N6796 |
TMOS FET TRANSISTOR N - CHANNEL |
SemeLAB |
55 |
2N6796 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 8A |
Siliconix |
56 |
2N6796E3 |
N-Channel |
Microsemi |
57 |
2N6796LCC4 |
N-CHANNEL POWER MOSFET |
SemeLAB |
58 |
2N6796U |
N-Channel |
Microsemi |
59 |
2N796 |
Germanium PNP Transistor |
Motorola |
60 |
2N796 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
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