No. |
Part Name |
Description |
Manufacturer |
31 |
GS88037AT-150I |
150MHz 256K x 36 9Mb sync burst SRAM |
GSI Technology |
32 |
GS88037AT-166 |
166MHz 256K x 36 9Mb sync burst SRAM |
GSI Technology |
33 |
GS88037AT-166I |
166MHz 256K x 36 9Mb sync burst SRAM |
GSI Technology |
34 |
GS88037AT-200 |
200MHz 256K x 36 9Mb sync burst SRAM |
GSI Technology |
35 |
GS88037AT-200I |
200MHz 256K x 36 9Mb sync burst SRAM |
GSI Technology |
36 |
GS88037AT-225 |
225MHz 256K x 36 9Mb sync burst SRAM |
GSI Technology |
37 |
GS88037AT-225I |
225MHz 256K x 36 9Mb sync burst SRAM |
GSI Technology |
38 |
GS88037AT-250 |
250MHz 256K x 36 9Mb sync burst SRAM |
GSI Technology |
39 |
GS88037AT-250I |
250MHz 256K x 36 9Mb sync burst SRAM |
GSI Technology |
40 |
HN58C257AT-10 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Hitachi Semiconductor |
41 |
HN58C257AT-10 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
42 |
HN58C257AT-10E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
43 |
HN58C257AT-85 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Hitachi Semiconductor |
44 |
HN58C257AT-85 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
45 |
HN58C257AT-85E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
46 |
HN58V257AT-12 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A) |
Hitachi Semiconductor |
47 |
HN58V257AT-12 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
48 |
HN58V257AT-12E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
49 |
IP3R17AT-05 |
3 AMP FIXED NEGATIVE VOLTAGE REGULATORS |
SemeLAB |
50 |
IP3R17AT-12 |
3 AMP FIXED NEGATIVE VOLTAGE REGULATORS |
SemeLAB |
51 |
IP3R17AT-15 |
3 AMP FIXED NEGATIVE VOLTAGE REGULATORS |
SemeLAB |
52 |
IP3R17AT-XX |
3 AMP, 3-terminal, fixed negative voltage regulator |
Seagate Microelectronics |
53 |
MH88617AT-PI |
0.3-6.0V; programmable SLIC with ringing amplification. For PABX/key telephone system, analog terminal adaptors, pair gain system, fibre in the loop/wireless local loop |
Mitel Semiconductor |
54 |
MMBT2907AT-7 |
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
Diodes |
55 |
MMBT2907AT-7-F |
Bipolar Transistors |
Diodes |
56 |
PIC16F627AT-E/SO |
This powerful (200 nanosecond instruction execution) yet easy-to-program (only 35 single word instructions) CMOS FLASH-based 8-bit ... |
Microchip |
57 |
PIC16F627AT-E/SS |
This powerful (200 nanosecond instruction execution) yet easy-to-program (only 35 single word instructions) CMOS FLASH-based 8-bit ... |
Microchip |
58 |
PIC16F627AT-E_MLXXX |
8-bit CMOS microcontroller, FLASH=1024 word, RAM=224b, EEPROM=128b, 20MHz |
Microchip |
59 |
PIC16F627AT-E_SOXXX |
8-bit CMOS microcontroller, FLASH=1024 word, RAM=224b, EEPROM=128b, 20MHz |
Microchip |
60 |
PIC16F627AT-E_SSXXX |
8-bit CMOS microcontroller, FLASH=1024 word, RAM=224b, EEPROM=128b, 20MHz |
Microchip |
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