| No. |
Part Name |
Description |
Manufacturer |
| 31 |
H7N1002LS |
Transistors>Switching/MOSFETs |
Renesas |
| 32 |
H7N1004FM |
Transistors>Switching/MOSFETs |
Renesas |
| 33 |
H7N1004LD |
Transistors>Switching/MOSFETs |
Renesas |
| 34 |
H7N1004LM |
Transistors>Switching/MOSFETs |
Renesas |
| 35 |
H7N1004LS |
Transistors>Switching/MOSFETs |
Renesas |
| 36 |
HGT5A27N120BN |
72A/ 1200V/ NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 37 |
HGTG27N120BN |
72A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 38 |
HGTG27N120BN |
72A/ 1200V/ NPT Series N-Channel IGBT |
Intersil |
| 39 |
IRF7N1405 |
55V Single N-Channel Hi-Rel MOSFET in a SMD-1 package |
International Rectifier |
| 40 |
IRL7N1404 |
40V Single N-Channel Hi-Rel MOSFET in a SMD-1 package |
International Rectifier |
| 41 |
IXFH67N10 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 42 |
IXFH67N10 |
HiPerFET Power MOSFETs |
IXYS Corporation |
| 43 |
IXFM67N10 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 44 |
IXFM67N10 |
HiPerFET Power MOSFETs |
IXYS Corporation |
| 45 |
IXGH17N100 |
3.5V diode |
IXYS |
| 46 |
IXGH17N100A |
3.5V diode |
IXYS |
| 47 |
IXGH17N100AU1 |
Low VCE(sat) IGBT with Diode High speed IGBT with Diode |
IXYS Corporation |
| 48 |
IXGH17N100U1 |
Low VCE(sat) IGBT with Diode High speed IGBT with Diode |
IXYS Corporation |
| 49 |
IXGM17N100 |
4.0V diode |
IXYS |
| 50 |
IXGM17N100A |
4.0V diode |
IXYS |
| 51 |
IXTH67N10 |
MegaMOSFET |
IXYS Corporation |
| 52 |
IXTM67N10 |
MegaMOSFET |
IXYS Corporation |
| 53 |
IXTM67N100 |
1000V HiPerFET power MOSFET |
IXYS |
| 54 |
K7N161801A-Q(F)C(I)13 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
| 55 |
K7N161801A-Q(F)C(I)16 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
| 56 |
K7N161801A-Q(F)C(I)20 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
| 57 |
K7N161801A-Q(F)C(I)25 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
| 58 |
K7N161801A-Q(F)C(I)25/20/ |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
| 59 |
K7N161831B |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
| 60 |
K7N161831B-QC16 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
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