No. |
Part Name |
Description |
Manufacturer |
31 |
IRFPS37N50 |
Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A) |
International Rectifier |
32 |
IRFPS37N50A |
500V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package |
International Rectifier |
33 |
KF7N50D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
34 |
KF7N50F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
35 |
KF7N50P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
36 |
KT867N51 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01 |
Optek Technology |
37 |
KT867N55 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05 |
Optek Technology |
38 |
KT877N51 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches |
Optek Technology |
39 |
KT877N55 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches |
Optek Technology |
40 |
LLQ1608-A7N5 |
Chip Inductors |
TOKO |
41 |
M7N5 |
MEDIUM CURRENT SILICON RECTIFIERS |
etc |
42 |
MTM7N50 |
N-Channel Power MOSFETs, 8A, 450 V/500V |
Fairchild Semiconductor |
43 |
MTM7N50 |
N-CHANNEL TMOS POWER FET 7A 450V 1.2 ohms |
Motorola |
44 |
OPB867N51 |
SLOTTED OPTICAL SWITCH |
QT Optoelectronics |
45 |
OPB867N55 |
SLOTTED OPTICAL SWITCH |
QT Optoelectronics |
46 |
PC357N5T |
PHOTOCOUPLER |
SHARP |
47 |
STD7N52DK3 |
N-channel 525 V, 0.95 Ohm typ., 6 A SuperFREDmesh(TM) 3 Power MOSFET in DPAK package |
ST Microelectronics |
48 |
STD7N52K3 |
N-channel 525 V, 0.72 Ohm, 6 A, DPAK SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
49 |
STF7N52DK3 |
N-channel 525 V, 0.95 Ohm typ., 6 A SuperFREDmesh(TM) 3 Power MOSFET in TO-220FP package |
ST Microelectronics |
50 |
STF7N52K3 |
N-channel 525 V, 0.72 Ohm, 6 A, TO-220FP SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
51 |
STP7N52DK3 |
N-channel 525 V, 0.95 Ohm typ., 6 A SuperFREDmesh(TM) 3 Power MOSFET in TO-220FP package |
ST Microelectronics |
52 |
STP7N52K3 |
N-channel 525 V, 0.72 Ohm, 6 A, TO-220 SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
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