| No. |
Part Name |
Description |
Manufacturer |
| 31 |
14KESD8.0 |
Transient Voltage Suppressor |
Microsemi |
| 32 |
14KESD8.0A |
Transient Voltage Suppressor |
Microsemi |
| 33 |
15KP100A |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/128.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 162 V @ Ipp = 93 A. |
Panjit International Inc |
| 34 |
15KP100CA |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/128.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 162 V @ Ipp = 93 A. |
Panjit International Inc |
| 35 |
1N105 |
Silicon Microwave Switch BV=500V, PD=8.0W |
Motorola |
| 36 |
1N124 |
Germanium Diode Microwave Mixer - to 1,000 MHz, NF=10 to 8.0 dB |
Motorola |
| 37 |
1N124A |
Germanium Diode Microwave Mixer - to 1,000 MHz, NF=10 to 8.0 dB |
Motorola |
| 38 |
1N4602 |
Microwave Mixer f=13,300 MHz, NF=8.0 dB |
Motorola |
| 39 |
1N4605 |
Microwave Mixer f=16,000 MHz, NF=8.0 dB |
Motorola |
| 40 |
1N4746 |
18.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 41 |
1N4746 |
1 W silicon zener diode. Nominal zener voltage 18.0 V. |
Fairchild Semiconductor |
| 42 |
1N4746A |
18.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 43 |
1N4760 |
68.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 44 |
1N5248 |
500 mW silicon zener diode. Nominal zener voltage 18.0 V. |
Fairchild Semiconductor |
| 45 |
1N5248B |
18.0V 500 mW Zener Diode |
Continental Device India Limited |
| 46 |
1N5255 |
500 mW silicon zener diode. Nominal zener voltage 28.0 V. |
Fairchild Semiconductor |
| 47 |
1N5255B |
28.0V 500 mW Zener Diode |
Continental Device India Limited |
| 48 |
1N5538A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 49 |
1N5538B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 50 |
1N5538C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 51 |
1N5538D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
| 52 |
1N5544A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 53 |
1N5544B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 54 |
1N5742B |
18.0V Voltage Reference Diode |
Philips |
| 55 |
1N5756B |
68.0V Voltage Reference Diode |
Philips |
| 56 |
1N5941 |
1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 57 |
1N5941A |
1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 58 |
1N5941C |
1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 59 |
1N5941D |
1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 60 |
1N6374 |
8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
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