| No. |
Part Name |
Description |
Manufacturer |
| 31 |
EN29F800B-90TI |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 5.0 volt only. Speed 90ns. Bottom sector. |
Eon Silicon Solution |
| 32 |
HCPL-7800B-300 |
High CMR Isolation Amplifiers |
Agilent (Hewlett-Packard) |
| 33 |
HCPL-7800B-300 |
High CMR isolation amplifier |
Agilent (Hewlett-Packard) |
| 34 |
HCPL-7800B-500 |
High CMR Isolation Amplifiers |
Agilent (Hewlett-Packard) |
| 35 |
HCPL-7800B-500 |
High CMR isolation amplifier |
Agilent (Hewlett-Packard) |
| 36 |
HY29LV800B-55 |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
| 37 |
HY29LV800B-55I |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
| 38 |
HY29LV800B-70 |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
| 39 |
HY29LV800B-70I |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
| 40 |
HY29LV800B-90 |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
| 41 |
HY29LV800B-90I |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
| 42 |
K7A401800B-QC |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
| 43 |
K7A801800B-QC14 |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
| 44 |
K7A801800B-QC16 |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
| 45 |
M28W800B-GBT |
8 Mbit 512Kb x16/ Boot Block 3V Supply Flash Memory |
ST Microelectronics |
| 46 |
MAC800B-02 |
25V Triac (Thyristor) 4A RMS, sensitive gate |
Motorola |
| 47 |
MAC800B-05 |
50V Triac (Thyristor) 4A RMS, sensitive gate |
Motorola |
| 48 |
MAC800B-10 |
100V Triac (Thyristor) 4A RMS, sensitive gate |
Motorola |
| 49 |
MAC800B-20 |
200V Triac (Thyristor) 4A RMS, sensitive gate |
Motorola |
| 50 |
MAC800B-40 |
400V Triac (Thyristor) 4A RMS, sensitive gate |
Motorola |
| 51 |
MAC800B-60 |
600V Triac (Thyristor) 4A RMS, sensitive gate |
Motorola |
| 52 |
MAC800B-80 |
800V Triac (Thyristor) 4A RMS, sensitive gate |
Motorola |
| 53 |
MSM51V16800B-50JS |
2,097,152-word x 8-bit dynamic RAM |
OKI electronic components |
| 54 |
MSM51V16800B-50TS-K |
2,097,152-word x 8-bit dynamic RAM |
OKI electronic components |
| 55 |
MSM51V16800B-60JS |
2,097,152-word x 8-bit dynamic RAM |
OKI electronic components |
| 56 |
MSM51V16800B-60TS-K |
2,097,152-word x 8-bit dynamic RAM |
OKI electronic components |
| 57 |
MSM51V16800B-70JS |
2,097,152-word x 8-bit dynamic RAM |
OKI electronic components |
| 58 |
MSM51V16800B-70TS-K |
2,097,152-word x 8-bit dynamic RAM |
OKI electronic components |
| 59 |
SST39WF800B-70-4C-B3KE |
Memory |
Microchip |
| 60 |
SST39WF800B-70-4C-C2QE |
Memory |
Microchip |
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