No. |
Part Name |
Description |
Manufacturer |
31 |
AM29SL800CT150FI |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
Advanced Micro Devices |
32 |
AM29SL800CT150FIB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
Advanced Micro Devices |
33 |
AM29SL800CT150WBC |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
Advanced Micro Devices |
34 |
AM29SL800CT150WBCB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
Advanced Micro Devices |
35 |
AM29SL800CT150WBI |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
Advanced Micro Devices |
36 |
AM29SL800CT150WBIB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
Advanced Micro Devices |
37 |
BTA312-800CT |
3Q Hi-Com Triac |
NXP Semiconductors |
38 |
BTA410-800CT |
3Q Hi-Com Triac |
NXP Semiconductors |
39 |
BTA410X-800CT |
3Q Hi-Com Triac |
NXP Semiconductors |
40 |
BTA410Y-800CT |
3Q Hi-Com Triac |
NXP Semiconductors |
41 |
BTA420-800CT |
3Q Hi-Com Triac |
NXP Semiconductors |
42 |
BTA420X-800CT |
3Q Hi-Com Triac |
NXP Semiconductors |
43 |
GM71C17800CT-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns |
Hynix Semiconductor |
44 |
GM71C17800CT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
45 |
GM71C17800CT-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns |
Hynix Semiconductor |
46 |
GM71CS17800CT-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns |
Hynix Semiconductor |
47 |
GM71CS17800CT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
48 |
GM71CS17800CT-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns |
Hynix Semiconductor |
49 |
HM514800CTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
50 |
HM514800CTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
51 |
HM514800CTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
52 |
HM51S4800CTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
53 |
HM51S4800CTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
54 |
HM51S4800CTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
55 |
HYB25D128800CT |
MEMORY SPECTRUM |
Infineon |
56 |
HYB25D128800CT-6 |
128 Mbit Double Data Rate SDRAM |
Infineon |
57 |
HYB25D128800CTL-6 |
128 Mbit Double Data Rate SDRAM |
Infineon |
58 |
HYB25D256800CT |
256 Mbit Double Data Rate SDRAM |
Infineon |
59 |
HYB25D256800CT-5 |
256 Mbit Double Data Rate SDRAM |
Infineon |
60 |
HYB25D256800CT-6 |
256Mbit Double Data Rate (DDR) Components |
Infineon |
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