| No. |
Part Name |
Description |
Manufacturer |
| 31 |
ATV30C800J-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=3000Watts, VRWM=80V, Tolerance=5% |
Comchip Technology |
| 32 |
ATV30C800JB-G |
Transient Voltage Suppressor (TVS), PPPM=3000Watts, VRWM=80V, Tolerance=5% |
Comchip Technology |
| 33 |
ATV30C800JB-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=3000Watts, VRWM=80V, Tolerance=5% |
Comchip Technology |
| 34 |
ATV50C800J-G |
Transient Voltage Suppressor (TVS), PPPM=5000Watts, VRWM=80V, Tolerance=5% |
Comchip Technology |
| 35 |
ATV50C800J-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=5000Watts, VRWM=80V, Tolerance=5% |
Comchip Technology |
| 36 |
ATV50C800JB-G |
Transient Voltage Suppressor (TVS), PPPM=5000Watts, VRWM=80V, Tolerance=5% |
Comchip Technology |
| 37 |
ATV50C800JB-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=5000Watts, VRWM=80V, Tolerance=5% |
Comchip Technology |
| 38 |
EN29LV800J |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
Eon Silicon Solution |
| 39 |
EN29LV800JB-70T |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 70ns. Bottom sector. |
Eon Silicon Solution |
| 40 |
EN29LV800JB-70TI |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 70ns. Bottom sector. |
Eon Silicon Solution |
| 41 |
EN29LV800JB-90T |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 90ns. Bottom sector. |
Eon Silicon Solution |
| 42 |
EN29LV800JB-90TI |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 90ns. Bottom sector. |
Eon Silicon Solution |
| 43 |
EN29LV800JT-70T |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 70ns. Top sector. |
Eon Silicon Solution |
| 44 |
EN29LV800JT-70TI |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 70ns. Top sector. |
Eon Silicon Solution |
| 45 |
EN29LV800JT-90T |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 90ns. Top sector. |
Eon Silicon Solution |
| 46 |
EN29LV800JT-90TI |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 90ns. Top sector. |
Eon Silicon Solution |
| 47 |
HCPL-800J |
HCPL-800J · PLC Powerline DAA IC |
Agilent (Hewlett-Packard) |
| 48 |
HCPL-800J |
HCPL-800J · PLC Powerline DAA IC |
Agilent (Hewlett-Packard) |
| 49 |
HI5800JCD |
12-Bit, 3MSPS, Sampling A/D Converter |
Intersil |
| 50 |
HM514800JP-10 |
100ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 51 |
HM514800JP-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 52 |
HM514800JP-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 53 |
HYB3164800J |
8M x 8-Bit Dynamic RAM |
Siemens |
| 54 |
HYB3164800J-50 |
8M x 8-Bit Dynamic RAM |
Siemens |
| 55 |
HYB3164800J-60 |
8M x 8-Bit Dynamic RAM |
Siemens |
| 56 |
HYB3165800J-50 |
8M x 8-Bit Dynamic RAM |
Siemens |
| 57 |
HYB3165800J-60 |
8M x 8-Bit Dynamic RAM |
Siemens |
| 58 |
MG800J1US51 |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
TOSHIBA |
| 59 |
MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 60 |
MR27T12800J |
8M-Word x 16-Bit or 16M-Word x 8-Bit P2ROM |
OKI electronic componets |
| | | |
