No. |
Part Name |
Description |
Manufacturer |
31 |
SFAF806G |
Rectifier: Superfast |
Taiwan Semiconductor |
32 |
SFAS806G |
Rectifier: Superfast |
Taiwan Semiconductor |
33 |
STPSC806G-TR |
600 V power Schottky silicon carbide diode |
ST Microelectronics |
34 |
STTA806G |
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE |
SGS Thomson Microelectronics |
35 |
STTA806G |
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE |
SGS Thomson Microelectronics |
36 |
STTA806G |
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE |
ST Microelectronics |
37 |
STTA806G-TR |
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE |
ST Microelectronics |
38 |
STTH806G-TR |
Turbo 2 ultrafast - high voltage rectifier |
ST Microelectronics |
39 |
TMS320F2806GGMA |
32-Bit Digital Signal Controller with Flash |
Texas Instruments |
40 |
TMS320F2806GGMQ |
32-Bit Digital Signal Controller with Flash |
Texas Instruments |
41 |
TMS320F2806GGMS |
32-Bit Digital Signal Controller with Flash 100-BGA MICROSTAR -40 to 125 |
Texas Instruments |
42 |
TMX320F2806GGMA |
32-Bit Digital Signal Controller with Flash |
Texas Instruments |
43 |
UPA1806GR-9JG |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
44 |
UPA1806GR-9JG-E1 |
N Channel enhancement MOS FET |
NEC |
45 |
UPA1806GR-9JG-E2 |
N Channel enhancement MOS FET |
NEC |
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