No. |
Part Name |
Description |
Manufacturer |
31 |
ATR2812DF/CH |
ADVANCED ANALOG HYBRID-HIGH RELIABILITY DC/DC CONVERTERS |
International Rectifier |
32 |
ATR2812DF/ES |
ADVANCED ANALOG HYBRID-HIGH RELIABILITY DC/DC CONVERTERS |
International Rectifier |
33 |
ATR2812DF/HB |
ADVANCED ANALOG HYBRID-HIGH RELIABILITY DC/DC CONVERTERS |
International Rectifier |
34 |
ATS2812D |
25W Total Output Power 28 Vin +/-12 Vout Dual DC-DC Standard Converter in an ATS Package. |
International Rectifier |
35 |
ATW2812D |
Hi-Rel DC-DC Standard Dual Converter in a ATW package |
International Rectifier |
36 |
D2812D |
10W Total Output Power 28 Vin +/-12 Vout Dual DC-DC Rad-Tolerant Converter in a D Package. |
International Rectifier |
37 |
DAC2812D |
12V, 6W dual DC-DC converter |
M.S. Kennedy Corp. |
38 |
DAC2812DE |
12V, 6W dual DC-DC converter |
M.S. Kennedy Corp. |
39 |
DAC2812DH |
12V, 6W dual DC-DC converter |
M.S. Kennedy Corp. |
40 |
DAC2812DK |
12V, 6W dual DC-DC converter |
M.S. Kennedy Corp. |
41 |
DV200-2812D |
HIGH RELIABILITY DC-DC CONVERTERS |
Delta |
42 |
DV200-2812D/ML |
HIGH RELIABILITY DC-DC CONVERTERS |
Delta |
43 |
EM83812DP |
ALL-INONE PLUG & PLAY SCRLLING SERIAL MOUSE CONTROLLER |
ELAN Microelectronics |
44 |
HDF4812D |
3 Watt HD Series |
Shindengen |
45 |
HIM034812D |
3 W DC/DC HIM module with 18-72 V input, +/-12 V/+/-125 mA output |
HN Electronic Components |
46 |
HT2812D |
Single Sound Generator |
Holtek Semiconductor |
47 |
HT812D0 |
2.8 Second LOG-PCM Speech |
Holtek Semiconductor |
48 |
K4E160812D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
49 |
K4E160812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
50 |
K4E160812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
51 |
K4E170812D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
52 |
K4E170812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
53 |
K4E170812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
54 |
K4E660812D, K4E640812D |
8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
55 |
K4E660812D, K4E640812D |
8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
56 |
K4E660812D, K4E640812D |
8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
57 |
K4E660812D, K4E640812D |
8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
58 |
K4F160812D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
59 |
K4F160812D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
60 |
K4F160812D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
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