| No. |
Part Name |
Description |
Manufacturer |
| 31 |
LMH6628J-QML |
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
National Semiconductor |
| 32 |
LMH6628J-QMLV |
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
National Semiconductor |
| 33 |
LMH6628JFQML |
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
National Semiconductor |
| 34 |
LMH6628JFQMLV |
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
National Semiconductor |
| 35 |
LMH6628WG-QML |
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
National Semiconductor |
| 36 |
LMH6628WG-QMLV |
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
National Semiconductor |
| 37 |
LMH6628WGFQML |
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
National Semiconductor |
| 38 |
LMH6628WGFQMLV |
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019 |
National Semiconductor |
| 39 |
MAX5581EVCMODU |
Evaluation Kit/Evaluation System for the MAX5580, MAX5581, MAX5582, MAX5583, MAX5584, and MAX5585 |
MAXIM - Dallas Semiconductor |
| 40 |
MAX5581EVKIT |
Evaluation Kit/Evaluation System for the MAX5580, MAX5581, MAX5582, MAX5583, MAX5584, and MAX5585 |
MAXIM - Dallas Semiconductor |
| 41 |
MF0512M-11AT |
512,483,328 bytes (memory) flash ATA PC card |
Mitsubishi Electric Corporation |
| 42 |
MH32D64AKQJ-10 |
2,147,483,684-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 43 |
MH32D64AKQJ-75 |
2,147,483,684-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 44 |
MH32D64KQH-10 |
2,147,483,648-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 45 |
MH32D64KQH-75 |
2,147,483,648-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 46 |
MH32S64APHB-6 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 47 |
MH32S64APHB-7 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 48 |
MH32S64APHB-8 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 49 |
MH32S64PHB-6 |
2,147,483,648-BIT ( 33,554,432-WORD BY 64-BIT ) Synchronous DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 50 |
MNDS26F32M-X-RH |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 51 |
MNDS26F32ME/883 |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 52 |
MNDS26F32MER-QML |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 53 |
MNDS26F32MJ-QMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 54 |
MNDS26F32MJ/883 |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 55 |
MNDS26F32MJR-QML |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 56 |
MNDS26F32MJRQMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 57 |
MNDS26F32MW-QMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 58 |
MNDS26F32MW/883 |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 59 |
MNDS26F32MWG/883 |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
| 60 |
MNDS26F32MWGRQMLV |
QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A |
National Semiconductor |
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