| No. |
Part Name |
Description |
Manufacturer |
| 31 |
HN58V256AT-12E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 32 |
HN58V257AT |
Parallel EEPROMs |
Hitachi Semiconductor |
| 33 |
HN58V257AT-12 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A) |
Hitachi Semiconductor |
| 34 |
HN58V257AT-12 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A) |
Hitachi Semiconductor |
| 35 |
HN58V257AT-12 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 36 |
HN58V257AT-12E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 37 |
MGFS48V2527 |
2.7 - 2.5 GHz BAND 60W GaAs FET |
Mitsubishi Electric Corporation |
| 38 |
XC18V256PC20C |
In-system programmable configuration PROM. |
Xilinx |
| 39 |
XC18V256PC20I |
In-system programmable configuration PROM. |
Xilinx |
| 40 |
XC18V256SO20C |
In-system programmable configuration PROM. |
Xilinx |
| 41 |
XC18V256SO20I |
In-system programmable configuration PROM. |
Xilinx |
| 42 |
XC18V256VQ44C |
In-system programmable configuration PROM. |
Xilinx |
| 43 |
XC18V256VQ44I |
In-system programmable configuration PROM. |
Xilinx |
| | | |
