| No. |
Part Name |
Description |
Manufacturer |
| 31 |
HS9-RTX2010RH-Q |
Radiation Hardened Real Time Express Microcontroller |
Intersil |
| 32 |
MAX2769-RD0151 |
Universal GPS Receiver |
MAXIM - Dallas Semiconductor |
| 33 |
MSB709-RT1 |
PNP General Purpose Amplifier Transistor Surface Mount |
Leshan Radio Company |
| 34 |
MSB709-RT1 |
PNP General Purpose Amplifier Transistor Surface Mount |
Motorola |
| 35 |
MSB709-RT1 |
Small Signal Plastic PNP |
ON Semiconductor |
| 36 |
MSB709-RT1-D |
PNP General Purpose Amplifier Transistor Surface Mount |
ON Semiconductor |
| 37 |
MSB709-RT1G |
Small Signal Plastic PNP |
ON Semiconductor |
| 38 |
MSB709-RT2 |
General Purpose Amplifier Transistor PNP |
ON Semiconductor |
| 39 |
MT109-R |
3 x 3mm RECTANGULAR LED LAMPS |
Marktech Optoelectronics |
| 40 |
PIP3209-R |
TOPFET high side switch |
Philips |
| 41 |
PL611S-19-R24TC |
Clock and Timing - Clock Generation |
Microchip |
| 42 |
PL611S-19-R24TC-R |
Clock and Timing - Clock Generation |
Microchip |
| 43 |
PL611S-19-R29GC |
Clock and Timing - Clock Generation |
Microchip |
| 44 |
PL611S-19-R29GC-R |
Clock and Timing - Clock Generation |
Microchip |
| 45 |
Q60106-X109-R1 |
PNP GERMANIUM RF TRANSISTOR |
Siemens |
| 46 |
ST19-RFRDCS |
ST16-19RFRDCS CHIP SET INTERFACE SPECIFICATION |
SGS Thomson Microelectronics |
| 47 |
ST19-RFRDCS |
ST16-19RFRDCS CHIP SET INTERFACE SPECIFICATION |
ST Microelectronics |
| 48 |
STBB2J29-R |
800 mA 2.5 MHz, high efficiency dual mode buck-boost DC-DC converter |
ST Microelectronics |
| 49 |
TLE6209-R |
7 A H-Bridge for DC-Motor Applications |
Infineon |
| 50 |
TMP37FT9-REEL |
Low Voltage Temperature Sensor Vo=500 |
Analog Devices |
| 51 |
TMP37GT9-REEL |
Low Voltage Temperature Sensor Vo=500 |
Analog Devices |
| 52 |
V23839-R35-L55 |
iSFF - Intelligent Small Form Factor 1.25 Gigabit Ethernet 4.25/2.125/1.0625 Gbit/s Fibre Channel Multimode 850 nm Transceiver with LC Connector |
Infineon |
| 53 |
V23839-R36-L55 |
Transceivers by Form-factor MSA - iSFF - 1.25 GBE 4.25/ 2.125/ 1.0625 Gbit/s FC; MM 850 nm |
Infineon |
| 54 |
V23849-R35-C55 |
Transceivers by Form-factor MSA - iSFP? 1.25 Gbit/s GBE; 4.25/2.125/1.0625 Gbit/s FC, 850 nm; MM; LC; common ground sheme |
Infineon |
| 55 |
V23849-R36-C55 |
Transceivers by Form-factor MSA - iSFP? 1.25 Gbit/s GBE; 4.25/2.125/1.0625 Gbit/s FC, 850 nm; MM; LC; separated ground sheme |
Infineon |
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