| No. |
Part Name |
Description |
Manufacturer |
| 31 |
15KP120 |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A. |
Panjit International Inc |
| 32 |
15KP120C |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A. |
Panjit International Inc |
| 33 |
1N147 |
Germanium UHF Mixer f=900 MHz NF=10 to 9.0 dB |
Motorola |
| 34 |
1N147A |
Germanium UHF Mixer f=900 MHz NF=10 to 9.0 dB |
Motorola |
| 35 |
1N4378 |
Photosensitive Device I(dark)=10nA Sensitivity=9.0mA Vce=5.0V H=9.0 mW/cm2 |
Motorola |
| 36 |
1N4378 |
Photosensitive Device I(dark)=10nA Sensitivity=9.0mA Vce=5.0V H=9.0 mW/cm2 |
Motorola |
| 37 |
1N4754 |
39.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 38 |
1N4754A |
39.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 39 |
1N5244A |
14 V, 9.0 mA, zener diode |
Leshan Radio Company |
| 40 |
1N5244C |
14 V, 9.0 mA, zener diode |
Leshan Radio Company |
| 41 |
1N5244D |
14 V, 9.0 mA, zener diode |
Leshan Radio Company |
| 42 |
1N5249 |
500 mW silicon zener diode. Nominal zener voltage 19.0 V. |
Fairchild Semiconductor |
| 43 |
1N5249B |
19.0V 500 mW Zener Diode |
Continental Device India Limited |
| 44 |
1N5259B |
39.0V 500 mW Zener Diode |
Continental Device India Limited |
| 45 |
1N53 |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
| 46 |
1N53A |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
| 47 |
1N53B |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
| 48 |
1N53C |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
| 49 |
1N53D |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
| 50 |
1N5539A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 19.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 51 |
1N5539B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 19.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 52 |
1N5750B |
39.0V Voltage Reference Diode |
Philips |
| 53 |
1N750 |
500 mW silicon linear diode. Max zener impedance 19.0 Ohm, max zener voltage 4.7 V (Iz 20mA). |
Fairchild Semiconductor |
| 54 |
1N935 |
9.0 VOLT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
| 55 |
1N935 |
Temperature-compensated silicon zener reference diode. 500mA, 9.0V. |
Motorola |
| 56 |
1N935 |
Silicon Voltage Reference Diode temperature compensated 9.0V |
Transitron Electronic |
| 57 |
1N935A |
9.0 VOLT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
| 58 |
1N935A |
Temperature-compensated silicon zener reference diode. 500mA, 9.0V. |
Motorola |
| 59 |
1N935A |
Silicon Voltage Reference Diode temperature compensated 9.0V |
Transitron Electronic |
| 60 |
1N935B |
9.0 VOLT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
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