| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N5239C |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 32 |
1N5239D |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 33 |
1N5239UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. |
Microsemi |
| 34 |
1N5346B |
9.1 V, 150 mA, 5 W glass passivated zener diode |
Fagor |
| 35 |
1N5529A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 36 |
1N5529B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 37 |
1N5529C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 38 |
1N6270 |
9.1 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 39 |
1N6270A |
9.1 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 40 |
1N6270C |
9.1 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 41 |
1N6270CA |
9.1 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 42 |
1N757 |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 43 |
1N757 |
500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 44 |
1N757 |
400mW, 9.1 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 45 |
1N757A |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 46 |
1N757A |
500mW, silicon zener diode. Zener voltage 9.1 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 47 |
1N757A-1 |
9.1 V, 400 mW silicon zener diode |
BKC International Electronics |
| 48 |
1N757B |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 49 |
1N757C |
500mW, silicon zener diode. Zener voltage 9.1 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 50 |
1N757C |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 51 |
1N757D |
500mW, silicon zener diode. Zener voltage 9.1 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 52 |
1N757D |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 53 |
1N960 |
500 mW silicon planar zener diode. Max zener voltage 9.1 V. |
Fairchild Semiconductor |
| 54 |
1N960 |
400mW, 9.1 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 55 |
1N960A |
9.1 V, 14 mA, silicon planar zener diode |
Honey Technology |
| 56 |
1N960A |
9.1 V, zener diode |
Leshan Radio Company |
| 57 |
1N960B |
9.1 V, 14 mA, silicon planar zener diode |
Honey Technology |
| 58 |
1SMB5924A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 9.1 V. +-10% tolerance. |
Motorola |
| 59 |
1SMB5924B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 9.1 V. +-5% tolerance. |
Motorola |
| 60 |
BUK9M9R1-40E |
N-channel 40 V, 9.1 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
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