No. |
Part Name |
Description |
Manufacturer |
31 |
SFH4505 |
High-Speed Infrared Emitter (950 nm) |
Infineon |
32 |
SFH4510 |
GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm |
Siemens |
33 |
SFH4510 |
GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm |
Siemens |
34 |
SFH4515 |
GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm |
Siemens |
35 |
SFH4515 |
GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm |
Siemens |
36 |
SGA-2186 |
DC-5000 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 9.3 dB at 1950 MHz. |
Stanford Microdevices |
37 |
SGA-2286 |
DC-3500 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 14 dB at 1950 MHz. |
Stanford Microdevices |
38 |
SGA-2463 |
DC-2000 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 17.1 dB at 1950 MHz. |
Stanford Microdevices |
39 |
SGA-2486 |
DC-2000 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 16.7 dB at 1950 MHz. |
Stanford Microdevices |
40 |
SGA-3286 |
DC-5000 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 12.9 dB at 1950 MHz. |
Stanford Microdevices |
41 |
SGA-3363 |
DC-5500 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 15.9 dB at 1950 MHz. |
Stanford Microdevices |
42 |
SGA-3386 |
DC-5000 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 15.3 dB at 1950 MHz. |
Stanford Microdevices |
43 |
SGA-3463 |
DC-5000 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 19.5 dB at 1950 MHz. |
Stanford Microdevices |
44 |
SGA-3486 |
DC-5000 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 18.0 dB at 1950 MHz. |
Stanford Microdevices |
45 |
SGA-4363 |
DC-2000 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 14.8 dB at 1950 MHz |
Stanford Microdevices |
46 |
SGA-4386 |
DC-4500 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 14.6 dB at 1950 MHz |
Stanford Microdevices |
47 |
SGA-4486 |
DC-4500 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 15.9 dB at 1950 MHz |
Stanford Microdevices |
48 |
SGA-5263 |
DC-4500 MHz, silicon germanium cascadeable gain block. High output intercept: 29 dBm typ at 1950 MHz |
Stanford Microdevices |
49 |
SGA-6286 |
DC-5500 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 12.4 dB at 1950 MHz |
Stanford Microdevices |
50 |
SGA-6289 |
DC-4500 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 12.6 dB at 1950 MHz |
Stanford Microdevices |
51 |
SGA-6386 |
DC-3000 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 13.3 dB at 1950 MHz |
Stanford Microdevices |
52 |
SGA-6389 |
DC-4000 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 14.0 dB at 1950 MHz |
Stanford Microdevices |
53 |
SGA-6489 |
DC-3500 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 17.5 dB at 1950 MHz |
Stanford Microdevices |
54 |
SKY65175 |
1710-1950 MHz Variable Gain Amplifier |
Skyworks Solutions |
55 |
SKY73420-11 |
650-950 MHz Broadband, Application Configurable High Gain and Linearity Diversity Downconversion Mixer |
Skyworks Solutions |
56 |
STB10N95K5 |
N-channel 950 V, 0.65 Ohm typ., 8 A Zener-protected SuperMESH(TM) 5 Power MOSFET in D2PAK package |
ST Microelectronics |
57 |
STB20N95K5 |
N-channel 950 V, 0.275 Ohm typ., 17.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in D2PAK package |
ST Microelectronics |
58 |
STD2N95K5 |
N-channel 950 V, 4.2 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package |
ST Microelectronics |
59 |
STD5N95K3 |
N-channel 950 V, 3 Ohm, 4 A Zener-protected SuperMESH3(TM) Power MOSFET in DPAK package |
ST Microelectronics |
60 |
STD5N95K5 |
N-channel 950 V, 2 Ohm typ., 3.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package |
ST Microelectronics |
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