| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MTD9N10E |
OBSOLETE - Power MOSFET 9 Amps, 100 Volts |
ON Semiconductor |
| 32 |
MTD9N10E-D |
Power MOSFET 9 Amps, 100 Volts N-Channel DPAK |
ON Semiconductor |
| 33 |
PB-IRFB59N10D |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 34 |
PB-IRFS59N10D |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 35 |
PB-IRFSL59N10D |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 36 |
STD9N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 37 |
STD9N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 38 |
STD9N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 39 |
STD9N10-1 |
N-CHANNEL 100V - 0.23 & - 9A DPAK/IPAK MOSFET TRANSISTOR |
ST Microelectronics |
| 40 |
STD9N10L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 41 |
STD9N10L |
N - CHANNEL 100V - 0.22Ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 42 |
STD9N10L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 43 |
T529N1000 |
Mains Frequency Thyristor |
IPRS Baneasa |
| 44 |
T649N1000 |
Mains Frequency Thyristor |
IPRS Baneasa |
| 45 |
T719N1000 |
Mains Frequency Thyristor |
IPRS Baneasa |
| | | |
