No. |
Part Name |
Description |
Manufacturer |
31 |
D50N16R |
50A 1600V Rectifier Diode |
IPRS Baneasa |
32 |
D630N1600 |
630A 1600V Power Rectifier Diode |
IPRS Baneasa |
33 |
D800N1600 |
800A 1600V Power Rectifier Diode |
IPRS Baneasa |
34 |
G218BR-D3 |
Ultra 160 multi-mode LVD/SE SCSI terminator |
Global Mixed-mode Technology |
35 |
G218BR-S4 |
Ultra 160 multi-mode LVD/SE SCSI terminator |
Global Mixed-mode Technology |
36 |
G218BR-S5 |
Ultra 160 multi-mode LVD/SE SCSI terminator |
Global Mixed-mode Technology |
37 |
G218BT-D3 |
Ultra 160 multi-mode LVD/SE SCSI terminator |
Global Mixed-mode Technology |
38 |
G218BT-S4 |
Ultra 160 multi-mode LVD/SE SCSI terminator |
Global Mixed-mode Technology |
39 |
G218BT-S5 |
Ultra 160 multi-mode LVD/SE SCSI terminator |
Global Mixed-mode Technology |
40 |
MDD100N1600 |
100A 1600V Double-Diode Compact Module |
IPRS Baneasa |
41 |
MDD125N1600 |
125A 1600V Double Diode Compact Module |
IPRS Baneasa |
42 |
MJE4343 |
Power 16A 160V NPN Complementary Silicon |
ON Semiconductor |
43 |
MJE4353 |
Power 16A 160V PNP Complementary Silicon |
ON Semiconductor |
44 |
SF150U11 |
Silicon alloy-diffused junction thyristor 150A 1600V |
TOSHIBA |
45 |
SF300U11 |
Silicon alloy-diffused junction thyristor 300A 1600V |
TOSHIBA |
46 |
SF500U23 |
Silicon alloy-diffused junction thyristor 500A 1600V |
TOSHIBA |
47 |
SF80U11 |
Silicon alloy-diffused junction thyristor 80A 1600V |
TOSHIBA |
48 |
T100N1600 |
100A 1600V THYRISTOR |
IPRS Baneasa |
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