No. |
Part Name |
Description |
Manufacturer |
31 |
1SS352 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
32 |
1SS360 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
33 |
1SS360F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
34 |
1SS361 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
35 |
1SS361F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
36 |
1SS362 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
37 |
1SS368 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) |
TOSHIBA |
38 |
1SS382 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
39 |
1SS387 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
40 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
41 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
42 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
43 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
44 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
45 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
46 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
47 |
2N4208 |
PNP small signal ultra high speed saturated switch. |
Fairchild Semiconductor |
48 |
2N4209 |
PNP small signal ultra high speed saturated switch. |
Fairchild Semiconductor |
49 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
50 |
2SC3162 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
51 |
2SC3163 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
52 |
2SC3165 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
53 |
2SC3166 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
54 |
2SC3167 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
55 |
2SC3168 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
56 |
2SC3219 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
57 |
2SC3220 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
58 |
2SC3221 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
59 |
2SC3222 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
60 |
2SC3223 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
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