| No. |
Part Name |
Description |
Manufacturer |
| 31 |
OA172 |
Germanium diode |
Felvezeto Katalogus 1966 |
| 32 |
OPA172 |
36-V, Single-Supply, 10-MHz, Rail-to-Rail Output, Operational Amplifier |
Texas Instruments |
| 33 |
OPA172ID |
36-V, Single-Supply, 10-MHz, Rail-to-Rail Output, Operational Amplifier 8-SOIC -40 to 125 |
Texas Instruments |
| 34 |
OPA172IDBVR |
36-V, Single-Supply, 10-MHz, Rail-to-Rail Output, Operational Amplifier 5-SOT-23 -40 to 125 |
Texas Instruments |
| 35 |
OPA172IDBVT |
36-V, Single-Supply, 10-MHz, Rail-to-Rail Output, Operational Amplifier 5-SOT-23 -40 to 125 |
Texas Instruments |
| 36 |
OPA172IDCKR |
36-V, Single-Supply, 10-MHz, Rail-to-Rail Output, Operational Amplifier 5-SC70 -40 to 125 |
Texas Instruments |
| 37 |
OPA172IDCKT |
36-V, Single-Supply, 10-MHz, Rail-to-Rail Output, Operational Amplifier 5-SC70 -40 to 125 |
Texas Instruments |
| 38 |
OPA172IDR |
36-V, Single-Supply, 10-MHz, Rail-to-Rail Output, Operational Amplifier 8-SOIC -40 to 125 |
Texas Instruments |
| 39 |
TEA1720B3T |
HV start-up flyback controller for ultra-low no-load charger applications up to 12.5 W |
NXP Semiconductors |
| 40 |
TEA1720BT |
HV start-up flyback controller for ultra-low no-load charger applications up to 12.5 W |
NXP Semiconductors |
| 41 |
TEA1721AT |
HV start-up flyback controller with integrated MOSFET for 5 W applications, f~burst = 430 Hz |
NXP Semiconductors |
| 42 |
TEA1721BT |
HV start-up flyback controller with integrated MOSFET for 5 W applications, f~burst = 905 Hz |
NXP Semiconductors |
| 43 |
TEA1721DT |
HV start-up flyback controller with integrated MOSFET for 5 W applications, f~burst = 1270 Hz |
NXP Semiconductors |
| 44 |
TEA1721FT |
HV start-up flyback controller with integrated MOSFET for 5 W applications, f~burst = 1750 Hz |
NXP Semiconductors |
| 45 |
TEA1723AT |
HV start-up flyback controller with integrated MOSFET for 11 W applications, f~burst = 430 Hz |
NXP Semiconductors |
| 46 |
TEA1723BT |
HV start-up flyback controller with integrated MOSFET for 11 W applications, f~burst = 905 Hz |
NXP Semiconductors |
| 47 |
TEA1723DT |
HV start-up flyback controller with integrated MOSFET for 11 W applications, f~burst = 1270 Hz |
NXP Semiconductors |
| 48 |
TEA1723FT |
HV start-up flyback controller with integrated MOSFET for 11 W applications, f~burst = 1750 Hz |
NXP Semiconductors |
| 49 |
UPA1720 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 50 |
UPA1720G |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 51 |
UPA1720G-E1 |
N-channel enhancement type power MOS FET |
NEC |
| 52 |
UPA1720G-E2 |
N-channel enhancement type power MOS FET |
NEC |
| 53 |
UPA1721 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 54 |
UPA1721G |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 55 |
UPA1721G-E1 |
N-channel enhancement type power MOS FET |
NEC |
| 56 |
UPA1721G-E2 |
N-channel enhancement type power MOS FET |
NEC |
| 57 |
UPA1722 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 58 |
UPA1722G |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 59 |
UPA1722G-E1 |
N-channel enhancement type power MOS FET |
NEC |
| 60 |
UPA1722G-E2 |
N-channel enhancement type power MOS FET |
NEC |
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