No. |
Part Name |
Description |
Manufacturer |
31 |
FA1A4Z-T1B |
Compound transistor |
NEC |
32 |
FA1A4Z-T2B |
Compound transistor |
NEC |
33 |
FA4A4Z |
RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
NEC |
34 |
FN1A4Z |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD |
NEC |
35 |
FN1A4Z-L |
Compound transistor |
NEC |
36 |
FN1A4Z-T1B |
Compound transistor |
NEC |
37 |
FN1A4Z-T2B |
Compound transistor |
NEC |
38 |
FN4A4Z |
RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
NEC |
39 |
GA1A4Z |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
NEC |
40 |
GA1A4Z-T1 |
Hybrid transistor |
NEC |
41 |
GA1A4Z-T2 |
Hybrid transistor |
NEC |
42 |
GA4A4Z |
RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
NEC |
43 |
GN1A4Z |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
NEC |
44 |
GN1A4Z-T1 |
Hybrid transistor |
NEC |
45 |
GN1A4Z-T2 |
Hybrid transistor |
NEC |
46 |
GN4A4Z |
RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
NEC |
47 |
IRHNA4Z60SCS |
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
48 |
KA4A4Z |
RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
NEC |
49 |
KN4A4Z |
RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
NEC |
50 |
MA4Z082WA |
Silicon planer type |
Panasonic |
51 |
MA4Z159 |
Small-signal device - Diodes - Swicthing Diodes |
Panasonic |
52 |
MA4Z1590G |
Silicon epitaxial planar type |
Panasonic |
53 |
MA4Z713 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) |
Panasonic |
54 |
MA4Z7130G |
Silicon epitaxial planar type |
Panasonic |
55 |
MA4ZD03 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) |
Panasonic |
56 |
MA4ZD030G |
Silicon epitaxial planar type |
Panasonic |
57 |
MA4ZD14 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) |
Panasonic |
58 |
MA4ZD140G |
Silicon epitaxial planar type |
Panasonic |
59 |
MN103LFA4Z |
MN103L Series embedded Panasonic core |
Panasonic |
60 |
OA4ZHA |
High precision 5 uV zero drift, low-power quad op amp |
ST Microelectronics |
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