No. |
Part Name |
Description |
Manufacturer |
31 |
2N6515 |
High Voltage Transistor 625mW |
Micro Commercial Components |
32 |
2N6515 |
High Voltage Transistors |
ON Semiconductor |
33 |
2N6515 |
NPN Epitaxial Silicon High Voltage Transistor |
Samsung Electronic |
34 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
35 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
36 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
37 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
38 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
39 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
40 |
2N6517 |
High Voltage Transistor 625mW |
Micro Commercial Components |
41 |
2N6517 |
High Voltage Transistors |
ON Semiconductor |
42 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
43 |
2N6517RLRA |
High Voltage Transistors |
ON Semiconductor |
44 |
2N6517RLRP |
High Voltage Transistors |
ON Semiconductor |
45 |
2N6518 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
46 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
47 |
2N6519 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
48 |
2N6519 |
High Voltage Transistor 625mW |
Micro Commercial Components |
49 |
2N6519 |
High Voltage Transistors |
ON Semiconductor |
50 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
51 |
2N6519RLRA |
High Voltage Transistors |
ON Semiconductor |
52 |
2N6520 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
53 |
2N6520 |
High Voltage Transistor 625mW |
Micro Commercial Components |
54 |
2N6520 |
High Voltage Transistors |
ON Semiconductor |
55 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
56 |
2N6520RL1 |
High Voltage Transistors |
ON Semiconductor |
57 |
2N6520RLRA |
High Voltage Transistors |
ON Semiconductor |
58 |
2N6520RLRM |
High Voltage Transistors |
ON Semiconductor |
59 |
2SA1195 |
Silicon PNP epitaxial high voltage transistor |
TOSHIBA |
60 |
2SA1897 |
20 V, 5 A, PNP ultra-low saturation voltage transistor |
NEC |
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