| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AN48820A |
Low current consumption, high sensitivity CMOS Hall IC Operate by the value of magnetic flux density, regardless of polarity |
Panasonic |
| 32 |
AN48830B |
Low current consumption, high sensitivity CMOS Hall IC Operate by the value of magnetic flux density, regardless of polarity |
Panasonic |
| 33 |
AN48836B |
Magnetic Field Sensor ICs (Hall ICs) |
Panasonic |
| 34 |
AN48840B |
Low current consumption, high sensitivity CMOS Hall IC Alternating magnetic field operation (For low-speed rotation detection) |
Panasonic |
| 35 |
AN48841B |
Magnetic Field Sensor ICs (Hall ICs) |
Panasonic |
| 36 |
AN48846B |
Magnetic Field Sensor ICs (Hall ICs) |
Panasonic |
| 37 |
AN831 |
MAGNETIC SNUBBER FOR 200W PFC WITH UNIVERSAL MAINS |
SGS Thomson Microelectronics |
| 38 |
AN904 |
MAGNETIC AMPLIFIER WITH LPR30 CONTROLLER |
SGS Thomson Microelectronics |
| 39 |
AN904 |
MAGNETIC AMPLIFIER WITH LPR30 CONTROLLER |
ST Microelectronics |
| 40 |
AS5020 |
6-BIT MAGNETIC ANGULAR POSITION ENCODER WITH SERIAL INTERFACE |
Austria Mikro Systems |
| 41 |
AS5020T |
6-BIT MAGNETIC ANGULAR POSITION ENCODER WITH SERIAL INTERFACE |
Austria Mikro Systems |
| 42 |
BA6845FS |
Magnetic Disk LSIs > FDD stepping motor driver |
ROHM |
| 43 |
BA6846FV |
Magnetic Disk LSIs > FDD stepping motor driver |
ROHM |
| 44 |
BH1 |
βH1 Hall Magnetic Transducers |
IPRS Baneasa |
| 45 |
BH2 |
βH2 Hall Magnetic Transducers |
IPRS Baneasa |
| 46 |
BH6625FS |
Magnetic Disk LSIs > FDD read/write amplifier |
ROHM |
| 47 |
BH6626FS |
Magnetic Disk LSIs > FDD read/write amplifier |
ROHM |
| 48 |
BH6627FS |
Magnetic Disk LSIs > FDD read/write amplifier |
ROHM |
| 49 |
BH6628AFS |
Magnetic Disk LSIs > FDD read/write amplifier |
ROHM |
| 50 |
BH6629BFS |
Magnetic Disk LSIs > FDD read/write amplifier |
ROHM |
| 51 |
BS053 |
βS053 Magnetic sensors |
IPRS Baneasa |
| 52 |
BS057 |
βS057 Magnetic sensors |
IPRS Baneasa |
| 53 |
BS255 |
βS255 Magnetic sensors |
IPRS Baneasa |
| 54 |
BSM230 |
Magnetic sensor with built-in Hall device |
IPRS Baneasa |
| 55 |
BSM231 |
βSM231 Magnetic HALL - Effect sensors |
IPRS Baneasa |
| 56 |
BSM232 |
βSM232 Magnetic HALL - Effect sensors |
IPRS Baneasa |
| 57 |
BSM233 |
βSM233 Magnetic HALL - Effect sensors |
IPRS Baneasa |
| 58 |
BSM234 |
βSM234 Magnetic HALL - Effect sensors |
IPRS Baneasa |
| 59 |
CY9C62256 |
32K x 8 Magnetic Nonvolatile CMOS RAM |
Cypress |
| 60 |
CY9C62256-70PC |
32K x 8 Magnetic Nonvolatile CMOS RAM |
Cypress |
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