No. |
Part Name |
Description |
Manufacturer |
31 |
2N1194 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
32 |
2N2152 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
33 |
2N2153 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
34 |
2N2154 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
35 |
2N2156 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
36 |
2N2157 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
37 |
2N2158 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
38 |
2N2415 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
39 |
2N2416 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
40 |
2N3810DCSM |
DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
41 |
2N3962 |
High-Gain Low Noise PNP Transistor |
CCSIT-CE |
42 |
2N3962 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
43 |
2N3963 |
High-Gain Low Noise PNP Transistor |
CCSIT-CE |
44 |
2N3963 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
45 |
2N3964 |
High-Gain Low Noise PNP Transistor |
CCSIT-CE |
46 |
2N3964 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
47 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
48 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
49 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
50 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
51 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
52 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
53 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
54 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
55 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
56 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
57 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
58 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
59 |
2N6530 |
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
60 |
2N6531 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. |
General Electric Solid State |
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